0.47 µF 2 BIAS GND 7 C Datasheet C 1 4 Monaural Speaker ...
Datasheet
Class-AB Speaker Amplifier Series
2.8 W High Power Monaural Speaker Amplifier for Automotive
BD783xxEFJ-M BD783xxUEFJ-M Series
General Description BD783xxEFJ-M, BD783xxUEFJ-M Series are Class-AB monaural speaker amplifiers designed for automotive. Class-AB amplifiers have no requirements for care about EMI noise. Adopting power package HTSOP-J8 achieves high output power. Low quiescent current can reduce battery consumption. Shutdown current is also very low (0.1 ?A Typ) and pop noise level when switching to shutdown is very small, so this device is suitable for applications in which the mode often changes between "shutdown state" and "active state".
Features AEC-Q100 Qualified(Note 1) Pop Noise Reduction Function Shutdown Function Protection Functions - Over Current Protection - Thermal Shutdown - Under Voltage Lock Out (UVLO) Power Package with Thermal Pad HTSOP-J8
(Note 1) Grade2
Key Specifications
Output Power
1.2 W (Typ)
(VDD = 5 V, RL = 8 , THD+N = 1 %)
Output Power
2.8 W (Typ)
(VDD = 5 V, RL = 4 , THD+N = 10 %)
Quiescent Current
2.5 mA (Typ)
Shutdown Current
0.1 ?A (Typ)
Total Harmonic Distortion + Noise
(RL = 8 , f = 1 kHz) Output Noise Voltage
0.05 % (Typ)(Note 2) 15 VRMS (Typ)(Note 2)
Voltage Gain
6.0 dB to 26.0 dB (Typ)
Operating Temperature Range -40 ?C to +105 ?C
(Note 2) Characteristic of BD78306EFJ-M
Package HTSOP-J8
W (Typ) x D (Typ) x H (Max) 4.90 mm x 6.00 mm x 1.00 mm
Applications Automotive Instruments
Typical Application Circuit
HTSOP-J8
1 SDB From System
Control
C1
2 BIAS 0.47 ?F
Input Signal
C2
3 INP 0.47 ?F
C3
4 INN
0.47 ?F
OUTN 8
GND 7 VDD 6
C4
10 ?F VDD
OUTP 5
Figure 1
Product structure : Silicon integrated circuit
? 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 ? 14 ? 001
This product has no designed protection against radioactive rays.
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TSZ02201-0C1C0EC00760-1-2 28.Mar.2023 Rev.002
BD783xxEFJ-M BD783xxUEFJ-M Series
Pin Configuration
SDB 1 BIAS 2
INP 3 INN 4
(TOP VIEW) EXP-PAD
8 OUTN 7 GND 6 VDD 5 OUTP
Caution: VDD and GND pins adjoin each other. In case that these pins are shorted each other, it may make characteristics of power supply device worse, or it may damage power supply device. Considering this point, select power supply device which has protection functions as over current protection.
Pin Description Pin No. Pin Name
Function
1
SDB Shutdown
2
BIAS Bias
3
INP Positive differential input
4
INN Negative differential input
5
OUTP Positive output
6
VDD Power supply
7
GND Ground
8
OUTN Negative output
-
EXP-PAD Connect the EXP-PAD to Ground
Control Pin's Setting SDB pin High Low
Operating Mode Active
Shutdown
Block Diagram
INP
3
INN
4
BIAS
2
6
VDD Rf
Ri
Ri Rf Rf Ri
Ri Rf
Bias
SDB
1
GND
7
Figure 2
OUTP 5
OUTN 8
Over Current Pro tection Thermal Shu tdo wn
Under Vol tage Lock O ut
Part Number
BD78306EFJ-M BD78306UEFJ-M BD78310EFJ-M BD78310UEFJ-M BD78326EFJ-M BD78326UEFJ-M
Ri[k] (Typ)
90
70
16
Rf[k] (Typ)
90
110
164
? 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 ? 15 ? 001
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TSZ02201-0C1C0EC00760-1-2 28.Mar.2023 Rev.002
BD783xxEFJ-M BD783xxUEFJ-M Series
Absolute Maximum Ratings (Ta = 25 ?C)
Parameter
Symbol
Rating
Unit
Supply Voltage
VDDmax
7.0
V
Input Voltage
Vin
-0.3 to VDD+0.3
V
Storage Temperature Range
Tstg
-55 to +150
?C
Maximum Junction Temperature
Tjmax
150
?C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance(Note 1)
Parameter
Symbol
Thermal Resistance (Typ)
Unit
1s(Note 3)
2s2p(Note 4)
HTSOP-J8
Junction to Ambient
JA
149.4
39.8
?C/W
Junction to Top Characterization Parameter(Note 2)
JT
11.0
9.0
?C/W
(Note 1) Based on JESD51-2A (Still-Air), using a BD78326EFJ-M Chip. (Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package. (Note 3) Using a PCB board based on JESD51-3. (Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of Measurement Board
Single
Material
Board Size
FR-4 114.3 mm x 76.2 mm x 1.57 mmt
Top Copper Pattern Footprints and Traces
Layer Number of Measurement Board
4 Layers
Thickness 70 m
Material FR-4
Board Size 114.3 mm x 76.2 mm x 1.6 mmt
Top
2 Internal Layers
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70 m 74.2 mm x 74.2 mm
(Note 5) This thermal via connects with the copper pattern of all layers.
35 m
Thermal Via(Note 5)
Pitch
Diameter
1.20 mm
0.30 mm
Bottom Copper Pattern 74.2 mm x 74.2 mm
Thickness 70 m
Use a thermal design that has sufficient margin in consideration of power dissipation under actual operating conditions. This IC exposes its frame at the backside of package. Note that this part is assumed to be used after providing heat dissipation treatment to improve heat dissipation efficiency. Try to put heat dissipation pattern as wide as possible not only on the board surface but also on the backside.
Under the insufficient heat dissipation and excessive large signal input condition, power dissipation (Pdiss) exceeds maximum power dissipation (Pd) and thermal shutdown function may operate. Thermal design should be considered so that Pdiss is lower than Pd. Reference data of Pdiss is listed on P.7. (Tjmax : Maximum Junction Temperature = 150 ?C, Ta : Operating Ambient Temperature[?C], ja : Package Thermal Resistance[?C/W])
Power dissipation:
= ( - ) / [W]
This IC has thermal shutdown function. Thermal shutdown operates when Tj (junction temperature, which is assumed to be same as chip temperature) rises over about 180 ?C (Typ) and be released when Tj fall about 160 ?C (Typ) or less. Thermal shutdown is designed to protect the IC from temperature condition that exceeds Tjmax = 150 ?C, not to protect or warrant application set.
Note that device reliability is affected if it is used under temperature thermal shutdown operates.
? 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 ? 15 ? 001
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TSZ02201-0C1C0EC00760-1-2 28.Mar.2023 Rev.002
BD783xxEFJ-M BD783xxUEFJ-M Series
Recommended Operating Conditions
Parameter
Symbol
Min
Typ Max Unit
Operating Supply Voltage
VDD
4.0
5.0
5.5
V
Operating Temperature
Topr
-40
+25 +105
?C
Load Resistance
RL
3.2
8.0
38.4
Caution: Operating supply voltage and operating temperature are the ranges in which the IC is available for basic operation. (Basic operation means that the IC operates without emitting unexpected noise or stopping signal.) Characteristics and rating are not warranted in the whole operating supply voltage and operating temperature.
Electrical Characteristics 1
(Unless otherwise specified Ta = -40 ?C to +105 ?C, VDD = 5.0 V, f = 1 kHz, RL = 8 , BTL(Note 1), Active)
Parameter
Symbol
Limits
Min
Typ
Max
Unit
Conditions
Quiescent Current
ICC
-
2.5
6.0
mA No load
Shutdown Current Input Impedance Output Offset Voltage
ISD ZIN VOFS
-
0.1
25.0
?A
Shutdown SDB = Low
ZIN x0.4
ZIN
ZIN x1.6
k Refer to the table below
-30
0
+30
mV OUTP-OUTN
Control Pin (SDB)
Input Voltage
High Level Low Level
VIH
2.0
-
VDD
V
VIL
0
-
0.3
V
Under Voltage Lock Out (UVLO)
Threshold Supply
Detection
VUVLO_DET
-
3.43 3.80
V
Voltage
Release
VUVLO_REL
-
3.58 3.95
V
(Note 1) "BTL" means the state that RL is connected between the OUTP pin (pin5) and the OUTN pin (pin8).
Part Number
BD78306EFJ-M BD78306UEFJ-M BD78310EFJ-M BD78310UEFJ-M BD78326EFJ-M BD78326UEFJ-M
ZIN[k] (Typ)
45
35
8
Electrical Characteristics 2
(Unless otherwise specified Ta = 25 ?C, VDD = 5.0 V, f = 1 kHz, RL = 8 , BTL, Active)
Parameter
Symbol
Limits
Min
Typ
Max
Unit
Conditions
THD+N = 1 %,
Rated Output Power(Note 2)
PO
0.9
1.2
1.6
W
BW = 400 Hz to 30 kHz Continuous output time
60 s
THD+N = 10 %,
Maximum Output Power
POMAX
-
1.6
-
W
BW = 400 Hz to 30 kHz Continuous output time
90 s
Total Harmonic Distortion + Noise
THD+N
-
-
0.5
%
PO = 1 W BW = 400 Hz to 30 kHz
Voltage Gain(Note 2) Shutdown Attenuation
GV
GV - 1
GV
GV + 1
dB
PO = 0.5 W GV = 6 dB to 26 dB
ATTSD
-
-90
-80
dB
Vin = 0.1 VRMS BW = 400 Hz to 30 kHz
Power Supply Rejection Ratio
PSRR
-
-60
-40
dB
Vripple = 0.2 VP-P, C1 = 0.47 ?F BW = A-Weight
Output Noise Voltage
VNO
-
-
100
?VRMS
C1 = 0.47 ?F BW = A-Weight
(Note 2) The typical performance of device is shown Output Power and Voltage Gain. It largely depends on the board layout, parts, and power supply. The typical values are measured with the device and parts mounting on surface of ROHM's board directly and soldering thermal pad backside of package to top layer cupper pattern of the board.
This IC is applicable to only dynamic speaker, not to other loads.
? 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 ? 15 ? 001
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TSZ02201-0C1C0EC00760-1-2 28.Mar.2023 Rev.002
BD783xxEFJ-M BD783xxUEFJ-M Series
Typical Performance Curves
4.0
3.0 VUVLO_DET
2.0 RL = No Load
1.5
2.0
1.0
RL = 8 SDB = 0 V
Shutdown Current : ISD [?A]
Quiescent Current : ICC [mA]
1.0
VUVLO_REL
0.5
0.0
3
4
5
6
7
Supply Voltage : VDD [V]
Figure 3. Quiescent Current vs Supply Voltage
0.0 01234567 Supply Voltage : VDD [V]
Figure 4. Shutdown Current vs Supply Voltage
Total Harmonic Distortion + Noise : THD+N [%]
Total Harmonic Distortion + Noise : THD+N [%]
BD78306EFJ-M 10
VDD = 5 V RL = 8
1
BD78326EFJ-M 10
1
0.1
0.01
0.001 0.001
f = 100 Hz (30 kHz LPF) f = 1 kHz (BW = 400 Hz to 30 kHz) f = 10 kHz (BW = 400 Hz to 80 kHz)
0.01
0.1
1
10
Output Power : PO [W]
0.1
VDD = 5 V RL = 8
0.01
0.001 0.001
f = 100 Hz (30 kHz LPF) f = 1 kHz (BW = 400 Hz to 30 kHz) f = 10 kHz (BW = 400 Hz to 80 kHz)
0.01
0.1
1
10
Output Power : PO [W]
Figure 5. Total Harmonic Distortion + Noise vs Output Power
Figure 6. Total Harmonic Distortion + Noise vs Output Power
? 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 ? 15 ? 001
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TSZ02201-0C1C0EC00760-1-2 28.Mar.2023 Rev.002
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