N- and P-Channel 2.5-V (G-S) MOSFET

[Pages:7]Si4562DY

Vishay Siliconix

N- and P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

N-Channel

20

0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V

P-Channel

- 20

0.033 at VGS = - 4.5 V 0.050 at VGS = - 2.5 V

ID (A) 7.1 6.0 - 6.2 - 5.0

FEATURES

? Halogen-free According to IEC 61249-2-21 Definition

? TrenchFET? Power MOSFET: 2.5 Rated ? Compliant to RoHS directive 2002/95/EC

S1 1 G1 2 S2 3 G2 4

SO-8

8 D1 7 D1 6 D2 5 D2

Top View

Ordering Information: Si4562DY-T1-E3 (Lead (Pb)-free) Si4562DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1 G1

S2 G2

S1 N-Channel MOSFET

D2 P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 ?C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ?C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

TA = 25 ?C TA = 70 ?C

TA = 25 ?C TA = 70 ?C

VDS VGS ID

IDM IS PD

TJ, Tstg

20

- 20

? 12

7.1

- 6.2

5.7

- 4.9

40

- 40

1.7

- 1.7

2.0

1.3

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Notes: a. Surface Mounted on FR4 board, t 10 s.

Symbol RthJA

N- or P-Channel 62.5

Unit V

A

W ?C

Unit ?C/W

Document Number: 70717 S09-0867-Rev. C, 18-May-09

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Si4562DY

Vishay Siliconix

SPECIFICATIONS TJ = 25 ?C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage Gate-Body Leakage

VGS(th) IGSS

VDS = VGS, ID = 250 ?A VDS = VGS, ID = - 250 ?A

VDS = 0 V, VGS = ? 12 V

N-Ch P-Ch N-Ch P-Ch

0.6 - 0.6

1.6 V

- 1.6 ? 100

nA ? 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 ?C VDS = - 20 V, VGS = 0 V, TJ = 55 ?C

N-Ch P-Ch N-Ch P-Ch

1 - 1

?A 5 - 5

On-State Drain Currentb

ID(on)

Drain-Source On-State Resistanceb RDS(on)

Forward Transconductanceb

gfs

Diode Forward Voltageb

VSD

Dynamicb

VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V

VGS = 4.5 V, ID = 7.1 A VGS = - 4.5 V, ID = - 6.2 A

VGS = 2.5 V, ID = 6.0 A VGS = - 2.5 V, ID = - 5.0 A

VDS = 10 V, ID = 7.1 A VDS = - 10 V, ID = - 6.2 A

IS = 1.7 A, VGS = 0 V IS = - 1.7 A, VGS = 0 V

N-Ch

20

A

P-Ch - 20

N-Ch

0.019 0.025

P-Ch N-Ch

0.027 0.033

0.025 0.035

P-Ch

0.040 0.050

N-Ch

27

S

P-Ch

20

N-Ch P-Ch

1.2 V

- 1.2

Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time

Qg Qgs Qgd td(on)

tr td(off)

tf

N-Channel VDS = 10 V, VGS = 4.5 V, ID = 7.1 A

P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A

N-Channel VDD = 10 V, RL = 10 ID 1 A, VGEN = 4.5 V, Rg = 6

P-Channel VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 4.5 V, Rg = 6

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

25

50

22

35

6.5 nC

7

4

3.5

40

60

27

50

40

60

32

50

90

150

95

150

ns

40

60

45

70

Sorce-Drain Reverse Recovery Tme

trr

IF = 1.7 A, dI/dt = 100 A/?s IF = - 1.7 A, dI/dt = 100 A/?s

Notes:

a. For design aid only; not subject to production testing. b. Pulse test; pulse width 300 ?s, duty cycle 2 %.

N-Ch P-Ch

40

80

40

80

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 70717 S09-0867-Rev. C, 18-May-09

N-CHANNEL TYPICAL CHARACTERISTICS 25 ?C, unless otherwise noted

40

40

VGS = 5 V thru 3 V

2.5 V

30

30

Si4562DY

Vishay Siliconix

I D - Drain Current (A)

ID - Drain Current (A)

20 2 V

10

1 V, 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS - Drain-to-Source Voltage (V) Output Characteristics

0.10

RDS(on) - On-Resistance ()

0.08

0.06

0.04

0.02

0.00 0

VGS = 2.5 V

VGS = 4.5 V

10

20

30

40

ID - Drain Current (A) On-Resistance vs. Drain Current

5

VDS = 10 V ID = 7.1 A 4

VGS - Gate-to-Source Voltage (V)

3

2

1

0

0

5

10

15

20

25

Qg - Total Gate Charge (nC) Gate Charge

Document Number: 70717 S09-0867-Rev. C, 18-May-09

RDS(on) - On-Resistance (Normalized)

C - Capacitance (pF)

20

TC = 125 ?C 10

25 ?C

- 55 ?C 0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS - Gate-to-Source Voltage (V) Transfer Characteristics

4000

3200 Ciss

2400

1600

Coss 800

Crss

0

0

4

8

12

16

20

VDS - Drain-to-Source Voltage (V) Capacitance

1.6

VGS = 4.5 V ID = 7.1 A 1.4

1.2

1.0

0.8

0.6 - 50 - 25 0

25 50 75 100 125 150

TJ - Junction Temperature (?C) On-Resistance vs. Junction Temperature

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Si4562DY

Vishay Siliconix

N-CHANNEL TYPICAL CHARACTERISTICS 25 ?C, unless otherwise noted

40

TJ = 150 ?C 10

0.10 0.08

ID = 7.1 A

0.06

TJ = 25 ?C 0.04

RDS(on) - On-Resistance ()

I S - Source Current (A)

0.02

1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage

0.4

0.00

0

1

2

3

4

5

VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage

30

0.2

24

ID = 250 ?A

0.0

18

Power (W)

VGS(th) Variance (V)

- 0.2

12

- 0.4

6

- 0.6 - 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (?C) Threshold Voltage

2

1 Duty Cycle = 0.5

0 0.01

0.10

1.00

Time (s) Single Pulse Power

10.00

Normalized Effective Transient Thermal Impedance

0.2

0.1 0.1

0.05

0.02

0.01 10 -4

Notes: P DM

Single Pulse

t 1

t 2 1. Duty Cycle, D =

t 1 t 2

2. Per Unit Base = RthJA = 62.5 ?C/W

3. TJM - TA = PDMZthJA(t)

4. Surface Mounted

10 -3

10 -2

10 -1

1

Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient

10

30

4

Document Number: 70717 S09-0867-Rev. C, 18-May-09

Si4562DY

Vishay Siliconix

P-CHANNEL TYPICAL CHARACTERISTICS 25 ?C, unless otherwise noted

40

40

VGS = 5 V, 4.5 V, 4 V, 3.5 V

32

3 V

32

24

24

2.5 V

TC = - 55 ?C

25 ?C 125 ?C

I D - Drain Current (A)

I D - Drain Current (A)

16 8 0 0

0.10

2 V

1.5 V

1

2

3

4

5

VDS - Drain-to-Source Voltage (V) Output Characteristics

16

8

0

0

1

2

3

4

VGS - Gate-to-Source Voltage (V) Transfer Characteristics

4500

C - Capacitance (pF)

RDS(on) - On-Resistance ()

0.08

3600

Ciss

0.06

VGS = 2.5 V

0.04

0.02

VGS = 4.5 V

2700 1800

900

Coss

Crss

0.00 0

8

16

24

32

40

ID - Drain Current (A) On-Resistance vs. Drain Current

5

VDS = 10 V

4

ID = 6.2 A

3

0 0

1.6

4

8

12

16

20

VDS - Drain-to-Source Voltage (V) Capacitance

VGS = 4.5 V

1.4

ID = 6.2 A

1.2

RDS(on) - On-Resistance (Normalized)

VGS - Gate-to-Source Voltage (V)

2

1.0

1

0.8

0

0

5

10

15

20

25

Qg - Total Gate Charge (nC) Gate Charge

0.6 - 50 - 25 0

25 50 75 100 125 150

TJ - Junction Temperature (?C) On-Resistance vs. Junction Temperature

Document Number: 70717 S09-0867-Rev. C, 18-May-09

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Si4562DY

Vishay Siliconix

P-CHANNEL TYPICAL CHARACTERISTICS 25 ?C, unless otherwise noted

40

0.10

RDS(on) - On-Resistance ()

I S - Source Current (A)

TJ = 150 ?C 10

TJ = 25 ?C

0.08 0.06 0.04

ID = 6.2 A

0.02

1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage

0.6

0.00

0

1

2

3

4

5

VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage

30

24

0.3

ID = 250 ?A

18

Power (W)

VGS(th) Variance (V)

12 0.0

6

- 0.3 - 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (?C) Threshold Voltage

2

1 Duty Cycle = 0.5

0

0.01

0.10

1.00

10.00

Time (s) Single Pulse Power vs. Junction-to-Ambient

Normalized Effective Transient Thermal Impedance

0.2 Notes:

0.1

P DM

0.1

0.05 0.02 Single Pulse

t 1

t 2 1. Duty Cycle, D =

t 1 t 2

2. Per Unit Base = RthJA = 62.5 ?C/W

3. TJM - TA = PDMZthJA(t)

4. Surface Mounted

0.01

10 -4

10 -3

10 -2

10 -1

1

10

30

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see ppg?70717.

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Document Number: 70717 S09-0867-Rev. C, 18-May-09



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Revision: 02-Oct-12

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