TM Power MOSFET IXFH12N120P V = 1200V TM IXFV12N120P I = 12A ...

[Pages:5]PolarTM Power MOSFET HiPerFETTM

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IXFH12N120P IXFV12N120P IXFV12N120PS

VDSS =

ID25 =

RDS(on)

trr

1200V 12A 1.35 300ns

PLUS220 (IXFV)

Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS

dV/dt

PD TJ TJM Tstg TL TSOLD Md FC Weight

Test Conditions TJ = 25?C to 150?C TJ = 25?C to 150?C, RGS = 1M Continuous Transient

Maximum Ratings

1200

V

1200

V

? 30

V

? 40

V

TC = 25?C TC = 25?C, pulse width limited by TJM TC = 25?C TC = 25?C

IS IDM, VDD VDSS, TJ 150?C

TC = 25?C

12 30

6 500

15 543 -55 ... +150 150 -55 ... +150

A A A mJ

V/ns W ?C ?C ?C

Maximum lead temperature for soldering Plastic body for 10s

300

?C

260

?C

Mounting torque (TO-247)

1.13/10

Nm/lb.in.

Mounting force (PLUS 220)

11..65 / 2.5..14.6

N/lb.

TO-247 PLUS 220 types

6

g

4

g

Symbol

Test Conditions

(TJ = 25?C, unless otherwise specified)

BVDSS

VGS = 0V, ID = 1mA

VGS(th)

VDS = VGS, ID = 1mA

IGSS

VGS = ? 30V, VDS = 0V

IDSS

VDS = VDSS

VGS = 0V

TJ = 125?C

RDS(on)

VGS = 10V, ID = 0.5 ? ID25, Note 1

Characteristic Values Min. Typ. Max.

1200

V

3.5

6.5 V

? 100 nA

25 A 2 mA

1.15 1.35

G DS

D (TAB)

PLUS220SMD (IXFV_S)

G S

TO-247 (IXFH)

D (TAB)

D (TAB)

G = Gate D = Drain S = Source TAB = Drain

Features

z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS)

rated z Low package inductance

- easy to drive and to protect

Advantages

z Easy to mount z Space savings z High power density

Applications:

z High Voltage Switched-mode and resonant-mode power supplies

z High Voltage Pulse Power Applications z High Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF Generators z High Voltage DC-DC converters z High Voltage DC-AC inverters

? 2008 IXYS CORPORATION, All rights reserved

DS99894A (04/08)

Symbol

Test Conditions

(TJ = 25?C unless otherwise specified)

gfs

VDS = 20V, ID = 0.5 ? ID25, Note 1

Ciss Coss Crss

VGS = 0V, VDS = 25V, f = 1MHz

RGi

Gate input resistance

td(on) tr td(off) tf

Resistive Switching Times VGS = 10V, VDS = 0.5 ? VDSS, ID = 0.5 ? ID25 RG = 2 (External)

Qg(on) Qgs Qgd

VGS = 10V, VDS = 0.5 ? VDSS, ID = 0.5 ? ID25

RthJC RthCS

(TO-247, PLUS 220)

IXFH12N120P IXFV12N120P IXFV12N120PS

Characteristic Values

Min. Typ.

Max.

PLUS220 (IXFV) Outline

5

9

S

5400

pF

290

pF

40

pF

1.5

34

ns

25

ns

62

ns

34

ns

103

nC

29

nC

41

nC

0.21

0.23 ?C/W ?C/W

Source-Drain Diode TJ = 25?C unless otherwise specified)

IS

VGS = 0V

ISM

Repetitive, pulse width limited by TJM

VSD

IF = IS, VGS = 0V, Note 1

trr QRM

IF = 6A, -di/dt = 100A/s

IRM

VR = 100V, VGS = 0V

Characteristic Values

Min. Typ.

Max.

12 A

48 A

1.5 V

300 ns

0.5

C

6

A

TO-247 (IXFH) Outline

P

Note 1: Pulse test, t 300s; duty cycle, d 2%.

PLUS220SMD (IXFV_S) Outline

e

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or moreof the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

5,049,961 5,063,307 5,187,117

5,237,481 5,381,025 5,486,715

6,162,665 6,259,123 B1 6,306,728 B1

Dim. Millimeter Min. Max.

A

4.7 5.3

A1

2.2 2.54

A2

2.2 2.6

b

1.0 1.4

b1 1.65 2.13 b2 2.87 3.12

C

.4

.8

D 20.80 21.46

E 15.75 16.26

e 5.20 5.72

L 19.81 20.32

L1

4.50

P 3.55 3.65 Q 5.89 6.40

R 4.32 5.49 S 6.15 BSC

Inches Min. Max.

.185 .209 .087 .102 .059 .098

.040 .055 .065 .084 .113 .123

.016 .031 .819 .845 .610 .640

0.205 0.225 .780 .800 .177

.140 .144 0.232 0.252

.170 .216 242 BSC

6,404,065 B1 6,534,343 6,583,505

6,683,344 6,727,585 7,005,734 B2

6,710,405 B2 6,759,692 7,063,975 B2

6,710,463

6,771,478 B2 7,071,537

7,157,338B2

ID - Amperes

ID - Amperes

Fig. 1. Output Characteristics @ 25?C

12 VGS = 10V 8V

10

8

7V

6

4

6V

2

5V

0

0

2

4

6

8

10

12

14

16

VDS - Volts

Fig. 3. Output Characteristics @ 125?C

12 VGS = 10V 7V

10

8

6

6V

4

2

5V

0

0

5

10

15

20

25

30

35

VDS - Volts

Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current

2.4 VGS = 10V

2.2

TJ = 125?C

2.0

1.8

1.6

1.4

1.2 TJ = 25?C

1.0

0.8

0

2

4

6

8 10 12 14 16 18 20

ID - Amperes

RDS(on) - Normalized

? 2008 IXYS CORPORATION, All rights reserved

ID - Amperes

RDS(on) - Normalized

ID - Amperes

IXFH12N120P IXFV12N120P IXFV12N120PS

20 18 16 14 12 10

8 6 4 2 0

0

Fig. 2. Extended Output Characteristics @ 25?C

VGS = 10V 8V

7V

6V

5V

4

8

12

16

20

24

28

32

VDS - Volts

Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature

2.8

2.6

VGS = 10V

2.4

2.2

2.0

1.8

I D = 12A

1.6

I D = 6A

1.4

1.2

1.0

0.8

0.6

0.4

-50

-25

0

25

50

75

100 125 150

TJ - Degrees Centigrade

Fig. 6. Maximum Drain Current vs. Case Temperature

13

12

11

10

9

8

7

6

5

4

3

2

1

0

-50

-25

0

25

50

75

100 125 150

TC - Degrees Centigrade

IXFH12N120P IXFV12N120P IXFV12N120PS

ID - Amperes

Fig. 7. Input Admittance

14

12

10

TJ = 125?C

25?C

8

- 40?C

6

4

2

0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

VGS - Volts

Fig. 9. Forward Voltage Drop of Intrinsic Diode

40

35

30

25

20

15

TJ = 125?C

10

TJ = 25?C

5

0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts

10,000 1,000

Fig. 11. Capacitance

Ciss

Coss 100

Z(th)JC - ?C / W

VGS - Volts

g f s - Siemens

Fig. 8. Transconductance

16 TJ = - 40?C

14

12 25?C

10

8

125?C

6

4

2

0

0

2

4

6

8

10

12

14

16

18

ID - Amperes

10 9 8 7 6 5 4 3 2 1 0 0

Fig. 10. Gate Charge

VDS = 600V I D = 6A I G = 10mA

10 20 30 40 50 60 70 80 QG - NanoCoulombs

90 100 110

Fig. 12. Maximum Transient Thermal Im pedance

1.00

0.10

IS - Amperes

Capacitance - PicoFarads

f = 1 MHz

Crss

10 0

5

10

15

20

25

30

35

40

VDS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

0.01

0.0001

0.001

0.01

0.1

1

10

Pulse Width - Seconds

IXYS REF: F_12N120P(76) 04-01-08-A

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

IXYS:

IXFV12N120PS IXFV12N120P

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