BAV99 series High-speed switching diodes
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BAV99 series
High-speed switching diodes
Rev. 8 ¡ª 18 November 2010
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
Configuration
Package
configuration
NXP
JEITA
JEDEC
BAV99
SOT23
-
TO-236AB
dual series
small
BAV99S
SOT363
SC-88
-
quadruple; 2 series
very small
BAV99W
SOT323
SC-70
-
dual series
very small
1.2 Features and benefits
? High switching speed: trr ¡Ü 4 ns
? Low leakage current
? Small SMD plastic packages
? Low capacitance: Cd ¡Ü 1.5 pF
? Reverse voltage: VR ¡Ü 100 V
? AEC-Q101 qualified
1.3 Applications
? High-speed switching
? General-purpose switching
? Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VR = 80 V
-
-
0.5
¦ÌA
-
-
100
V
-
-
4
ns
Per diode
IR
reverse current
VR
reverse voltage
trr
reverse recovery time
[1]
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ¦¸; measured at IR = 1 mA.
BAV99 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BAV99; BAV99W
1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 1),
anode (diode 2)
3
3
1
2
006aaa144
1
2
006aaa763
BAV99S
1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 3),
anode (diode 4)
4
anode (diode 3)
5
cathode (diode 4)
6
cathode (diode 1),
anode (diode 2)
6
5
4
1
2
3
6
5
1
2
4
3
006aab101
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
BAV99
-
plastic surface-mounted package; 3 leads
SOT23
BAV99S
SC-88
plastic surface-mounted package; 6 leads
SOT363
BAV99W
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking
Table 5.
Marking code[1]
BAV99
A7*
BAV99S
K1*
BAV99W
A7*
[1]
BAV99_SER
Product data sheet
Marking codes
Type number
* = placeholder for manufacturing site code
All information provided in this document is subject to legal disclaimers.
Rev. 8 ¡ª 18 November 2010
? NXP B.V. 2010. All rights reserved.
2 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak reverse
voltage
-
100
V
VR
reverse voltage
-
100
V
IF
forward current
[1]
-
215
mA
[2]
-
125
mA
BAV99S
[1]
-
200
mA
BAV99W
[1]
-
150
mA
[2]
-
130
mA
-
500
mA
BAV99
IFRM
repetitive peak forward
current
IFSM
non-repetitive peak
forward current
square wave
[3]
tp = 1 ¦Ìs
-
4
A
tp = 1 ms
-
1
A
-
0.5
A
-
250
mW
-
250
mW
-
200
mW
tp = 1 s
[1][4]
total power dissipation
Ptot
BAV99
Tamb ¡Ü 25 ¡ãC
BAV99S
Tsp ¡Ü 85 ¡ãC
BAV99W
Tamb ¡Ü 25 ¡ãC
[5]
Per device
BAV99_SER
Product data sheet
Tj
junction temperature
-
150
¡ãC
Tamb
ambient temperature
?65
+150
¡ãC
Tstg
storage temperature
?65
+150
¡ãC
[1]
Single diode loaded.
[2]
Double diode loaded.
[3]
Tj = 25 ¡ãC prior to surge.
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[5]
Soldering points at pins 2, 3, 5 and 6.
All information provided in this document is subject to legal disclaimers.
Rev. 8 ¡ª 18 November 2010
? NXP B.V. 2010. All rights reserved.
3 of 14
BAV99 series
NXP Semiconductors
High-speed switching diodes
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
BAV99
-
-
500
K/W
BAV99W
-
-
625
K/W
-
-
360
K/W
-
-
260
K/W
-
-
300
K/W
thermal resistance from
junction to ambient
in free air
[1][2]
thermal resistance from
junction to solder point
BAV99
[3]
BAV99S
BAV99W
[1]
Single diode loaded.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Soldering points at pins 2, 3, 5 and 6.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 ¡ãC unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
VR = 80 V
-
-
0.5
¦ÌA
VR = 25 V; Tj = 150 ¡ãC
-
-
30
¦ÌA
VR = 80 V; Tj = 150 ¡ãC
-
-
50
¦ÌA
pF
Per diode
VF
IR
Cd
BAV99_SER
Product data sheet
reverse current
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
[1]
VFR
forward recovery voltage
[2]
-
-
1.5
-
-
4
ns
-
-
1.75
V
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ¦¸; measured at IR = 1 mA.
[2]
When switched from IF = 10 mA; tr = 20 ns.
All information provided in this document is subject to legal disclaimers.
Rev. 8 ¡ª 18 November 2010
? NXP B.V. 2010. All rights reserved.
4 of 14
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