BAV99 series High-speed switching diodes

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of , or ,

use

Instead of sales.addresses@ or sales.addresses@semiconductors., use

salesaddresses@ (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

- ? NXP N.V. (year). All rights reserved or ? Koninklijke Philips Electronics N.V. (year). All rights

reserved

Should be replaced with:

- ? Nexperia B.V. (year). All rights reserved.

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@). Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

BAV99 series

High-speed switching diodes

Rev. 8 ¡ª 18 November 2010

Product data sheet

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

Table 1.

Product overview

Type number

Package

Configuration

Package

configuration

NXP

JEITA

JEDEC

BAV99

SOT23

-

TO-236AB

dual series

small

BAV99S

SOT363

SC-88

-

quadruple; 2 series

very small

BAV99W

SOT323

SC-70

-

dual series

very small

1.2 Features and benefits

? High switching speed: trr ¡Ü 4 ns

? Low leakage current

? Small SMD plastic packages

? Low capacitance: Cd ¡Ü 1.5 pF

? Reverse voltage: VR ¡Ü 100 V

? AEC-Q101 qualified

1.3 Applications

? High-speed switching

? General-purpose switching

? Reverse polarity protection

1.4 Quick reference data

Table 2.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

VR = 80 V

-

-

0.5

¦ÌA

-

-

100

V

-

-

4

ns

Per diode

IR

reverse current

VR

reverse voltage

trr

reverse recovery time

[1]

[1]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 ¦¸; measured at IR = 1 mA.

BAV99 series

NXP Semiconductors

High-speed switching diodes

2. Pinning information

Table 3.

Pinning

Pin

Description

Simplified outline

Graphic symbol

BAV99; BAV99W

1

anode (diode 1)

2

cathode (diode 2)

3

cathode (diode 1),

anode (diode 2)

3

3

1

2

006aaa144

1

2

006aaa763

BAV99S

1

anode (diode 1)

2

cathode (diode 2)

3

cathode (diode 3),

anode (diode 4)

4

anode (diode 3)

5

cathode (diode 4)

6

cathode (diode 1),

anode (diode 2)

6

5

4

1

2

3

6

5

1

2

4

3

006aab101

3. Ordering information

Table 4.

Ordering information

Type number

Package

Name

Description

Version

BAV99

-

plastic surface-mounted package; 3 leads

SOT23

BAV99S

SC-88

plastic surface-mounted package; 6 leads

SOT363

BAV99W

SC-70

plastic surface-mounted package; 3 leads

SOT323

4. Marking

Table 5.

Marking code[1]

BAV99

A7*

BAV99S

K1*

BAV99W

A7*

[1]

BAV99_SER

Product data sheet

Marking codes

Type number

* = placeholder for manufacturing site code

All information provided in this document is subject to legal disclaimers.

Rev. 8 ¡ª 18 November 2010

? NXP B.V. 2010. All rights reserved.

2 of 14

BAV99 series

NXP Semiconductors

High-speed switching diodes

5. Limiting values

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VRRM

repetitive peak reverse

voltage

-

100

V

VR

reverse voltage

-

100

V

IF

forward current

[1]

-

215

mA

[2]

-

125

mA

BAV99S

[1]

-

200

mA

BAV99W

[1]

-

150

mA

[2]

-

130

mA

-

500

mA

BAV99

IFRM

repetitive peak forward

current

IFSM

non-repetitive peak

forward current

square wave

[3]

tp = 1 ¦Ìs

-

4

A

tp = 1 ms

-

1

A

-

0.5

A

-

250

mW

-

250

mW

-

200

mW

tp = 1 s

[1][4]

total power dissipation

Ptot

BAV99

Tamb ¡Ü 25 ¡ãC

BAV99S

Tsp ¡Ü 85 ¡ãC

BAV99W

Tamb ¡Ü 25 ¡ãC

[5]

Per device

BAV99_SER

Product data sheet

Tj

junction temperature

-

150

¡ãC

Tamb

ambient temperature

?65

+150

¡ãC

Tstg

storage temperature

?65

+150

¡ãC

[1]

Single diode loaded.

[2]

Double diode loaded.

[3]

Tj = 25 ¡ãC prior to surge.

[4]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[5]

Soldering points at pins 2, 3, 5 and 6.

All information provided in this document is subject to legal disclaimers.

Rev. 8 ¡ª 18 November 2010

? NXP B.V. 2010. All rights reserved.

3 of 14

BAV99 series

NXP Semiconductors

High-speed switching diodes

6. Thermal characteristics

Table 7.

Symbol

Rth(j-a)

Rth(j-sp)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

BAV99

-

-

500

K/W

BAV99W

-

-

625

K/W

-

-

360

K/W

-

-

260

K/W

-

-

300

K/W

thermal resistance from

junction to ambient

in free air

[1][2]

thermal resistance from

junction to solder point

BAV99

[3]

BAV99S

BAV99W

[1]

Single diode loaded.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Soldering points at pins 2, 3, 5 and 6.

7. Characteristics

Table 8.

Characteristics

Tamb = 25 ¡ãC unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

IF = 1 mA

-

-

715

mV

IF = 10 mA

-

-

855

mV

IF = 50 mA

-

-

1

V

IF = 150 mA

-

-

1.25

V

VR = 25 V

-

-

30

nA

VR = 80 V

-

-

0.5

¦ÌA

VR = 25 V; Tj = 150 ¡ãC

-

-

30

¦ÌA

VR = 80 V; Tj = 150 ¡ãC

-

-

50

¦ÌA

pF

Per diode

VF

IR

Cd

BAV99_SER

Product data sheet

reverse current

diode capacitance

f = 1 MHz; VR = 0 V

trr

reverse recovery time

[1]

VFR

forward recovery voltage

[2]

-

-

1.5

-

-

4

ns

-

-

1.75

V

[1]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 ¦¸; measured at IR = 1 mA.

[2]

When switched from IF = 10 mA; tr = 20 ns.

All information provided in this document is subject to legal disclaimers.

Rev. 8 ¡ª 18 November 2010

? NXP B.V. 2010. All rights reserved.

4 of 14

 ................
................

In order to avoid copyright disputes, this page is only a partial summary.

Google Online Preview   Download