December 2015 FQT4N25TF

[Pages:9]FQT4N25TF N-Channel MOSFET

FQT4N25TF

N-Channel QFET? MOSFET

250 V, 0.83 A, 1.75

December 2015

Description

Features

This N-Channel enhancement mode power MOSFET is ? 0.83 A, 250 V, RDS(on)=1.75 (Max.)@VGS=10 V, ID=0.415 A

produced using Fairchild Semiconductor?'s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

? Low Gate Charge (Typ. 4.3 nC) ? Low Crss (Typ. 4.8 pF)

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

D

S

G SOT-223

D

!

"

!"

G!

" "

!

S

Absolute Maximum Ratings TC = 25?C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

TL

Parameter Drain-Source Voltage

Drain Current

- Continuous (TC = 25?C) - Continuous (TC = 70?C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25?C) - Derate above 25?C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

RJA

Thermal Resistance, Junction-to-Ambient *

* When mounted on the minimum pad size recommended (PCB Mount)

FQT4N25TF 250 0.83 0.66 3.3 ? 30 52 0.83 0.25 5.5 2.5 0.02

-55 to +150

300

Typ

Max

--

50

Unit V A A A V mJ A mJ

V/ns W

W/?C ?C

?C

Unit ?C/W

?2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2



FQT4N25TF N-Channel MOSFET

Package Marking and Ordering Information

Part Number FQT4N25TF

Top Mark FQT4N25

Package SOT-223

Packing Method Tape and Reel

Reel Size 13"

Tape Width 12 mm

Quantity 2500 units

Electrical Characteristics

Symbol

Parameter

TC = 25?C unless otherwise noted

Test Conditions

Min Typ Max Unit

Off Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 ?A

250 --

BVDSS Breakdown Voltage Temperature / TJ Coefficient

ID = 250 ?A, Referenced to 25?C -- 0.22

IDSS

Zero Gate Voltage Drain Current

VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125?C

--

--

--

--

IGSSF

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V

--

--

IGSSR

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V

--

--

--

--

1 10 100 -100

V

V/?C

?A ?A nA nA

On Characteristics

VGS(th) Gate Threshold Voltage

RDS(on) Static Drain-Source On-Resistance

gFS

Forward Transconductance

VDS = VGS, ID = 250 ?A

3.0 --

5.0

V

VGS = 10 V, ID = 0.415 A

-- 1.38 1.75

VDS = 50 V, ID = 0.415 A (Note 4) -- 1.28

--

S

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V, f = 1.0 MHz

-- 155 200

pF

-- 35

45

pF

-- 4.8 6.5

pF

Switching Characteristics

td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 125 V, ID = 3.6 A, RG = 25

-- 6.8

25

ns

--

45 100

ns

-- 6.4

25

ns

(Note 4, 5) --

22

55

ns

VDS = 200 V, ID = 3.6 A,

-- 4.3

5.6

nC

VGS = 10 V

-- 1.3

--

nC

(Note 4, 5) --

2.1

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

-- 0.83

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

--

3.3

A

VSD

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A

--

--

1.5

V

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 3.6 A,

-- 110

--

ns

dIF / dt = 100 A/?s

(Note 4) -- 0.35

--

?C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 120mH, IAS = 0.83A, VDD = 50V, RG = 25 , Starting TJ = 25?C 3. ISD 3.6A, di/dt 300A/?s, VDD BVDSS, Starting TJ = 25?C 4. Pulse Test : Pulse width 300?s, Duty cycle 2% 5. Essentially independent of operating temperature

?2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2



Typical Characteristics

Top : 15.V0GVS

10.0 V

8.0 V

7.0 V

6.5 V

100

6.0 V

Bottom : 5.5 V

ID, Drain Current [A]

DS(ON) R [ ], Drain-Source On-Resistance

10-1 10-1

Notes : 1. 250 s Pulse Test 2. TC = 25

100

101

V , Drain-Source Voltage [V] DS

Figure 1. On-Region Characteristics

8

6 VGS = 10V

4

VGS = 20V

2

Note : T = 25 J

0

0

2

4

6

8

ID, Drain Current [A]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

350 300 250 200 150 100 50

0 10-1

C = C + C (C = shorted) iss gs gd ds

Coss = Cds + Cgd Crss = Cgd

Ciss Coss

Notes : 1. VGS = 0 V 2. f = 1 MHz

C rss

100

101

V , Drain-Source Voltage [V] DS

Figure 5. Capacitance Characteristics

Capacitance [pF]

?2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2

VGS, Gate-Source Voltage [V]

IDR , Reverse Drain Current [A]

ID , Drain Current [A]

100 10-1

2

150

25

-55

Notes :

1. 2.

2V5D0S =

50V s Pulse

Test

4

6

8

10

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

100

10-1 0.2

150

25

Notes : 1. V = 0V

GS

2. 250 s Pulse Test

0.4

0.6

0.8

1.0

1.2

1.4

VSD , Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

12

VDS = 50V

10

VDS = 125V

VDS = 200V

8

6

4

2

Note : ID = 3.6 A

0

0

1

2

3

4

5

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics



FQT4N25TF N-Channel MOSFET

FQT4N25TF N-Channel MOSFET

Typical Characteristics (Continued)

BVDSS, (Normalized) Drain-Source Breakdown Voltage

1.2

1.1

1.0

0.9

Notes :

1. VGS = 0 V

2. ID=250 A

0.8

-100

-50

0

50

100

150

200

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation vs. Temperature

101

Operation in This Area is Limited by R DS(on)

100

1

100 ms

?s

10 ms

100 ms

DC 10-1

10-2 10-3

10-1

Notes : 1. T = 25 oC

C

2. TJ = 150 oC 3. Single Pulse

100

101

102

VDS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

ID, Drain Current [A]

DS(ON) R , (Normalized) Drain-Source On-Resistance

ID, Drain Current [A]

3.0

2.5

2.0

1.5

1.0

0.5

0.0 -100

Notes : 1. VGS = 10 V 2. ID = 0.415 A

-50

0

50

100

150

200

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation vs. Temperature

1.0

0.8

0.6

0.4

0.2

0.0

25

50

75

100

125

150

T , Case Temperature [] C

Figure 10. Maximum Drain Current vs. Case Temperature

Z (t), Therm al Response JC

D =0 .5

101

0 .2

0 .1 0 .0 5

100 0.02 0 .0 1

s in gle pu ls e

N otes :

1.

Z

(t)

JC

=

50

/W

M ax.

2. D u ty F ac to r, D = t1/t2

3.

T JM

-

T C

=

P DM

*

Z

(t)

JC

PDM t1 t2

1 0 -1

1 0 -5

1 0 -4

1 0 -3

1 0 -2

1 0 -1

100

101

102

103

t1, S quare W ave P ulse D uration [sec]

Figure 11. Transient Thermal Response Curve

?2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2



FQT4N25TF N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Same Type

VGS

50K

as DUT

Qg

12V

200nF

300nF

10V

VGS

VDS

Qgs

Qgd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

10V

VDS

VGS RG

RL VDD

DUT

VDS

90%

VGS 10%

td(on)

tr t on

td(off)

tf

t off

10V

t p

Unclamped Inductive Switching Test Circuit & Waveforms

VDS

ID RG

L

EAS

=

--1-2

L IAS2

BVDSS --------------------

BVDSS - VDD

BVDSS IAS

VDD

ID (t)

DUT

VDD

VDS (t)

t p

Time

?2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2



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