SFH 309

osram-

SFH 30 9

DATASHEET

SFH 309

Datasheet

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Published by ams-OSRAM AG

Tobelbader Strasse 30, 8141 Premstaetten, Austria

Phone +43 3136 500-0

ams-

? All

reserved

| Version

1.4 | 2022-08-11

1 rights

SFH 30 9

DATASHEET

Radial T1

SFH 309

Silicon NPN Phototransistor

Applications

- Access Control & Security

- Appliances & Tools

Features

- Package: clear epoxy

- ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

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- Spectral range of sensitivity: (typ) 380 ... 1150 nm

- High photosensitivity

- High linearity

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- Available in groups

2 | Version 1.4 | 2022-08-11

SFH 30 9

DATASHEET

Ordering Information

Type

Photocurrent 1)

VCE = 5 V; ¦Ë = 950 nm; Ee = 0.5 mW/

cm?

IPCE

SFH 309

Photocurrent 2)

Ordering Code

typ.

VCE = 5 V; ¦Ë = 950 nm; Ee = 0.5 mW/cm?

IPCE

450 ... 4500 ?A

2,700 ?A

Q62702P0859

SFH 309-4

1120 ... 1800 ?A

1,500 ?A

Q62702P0998

SFH 309-5

1800 ... 2800 ?A

2,700 ?A

Q62702P0999

SFH 309-3/4

710 ... 1800 ?A

1,500 ?A

Q62702P3592

SFH 309-4/5

1120 ... 2800 ?A

2,700 ?A

Q62702P3593

SFH 309-5/6

1800 ... 4500 ?A

2,700 ?A

Q62702P3594

Only one bin within one packing unit.

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3 | Version 1.4 | 2022-08-11

SFH 30 9

DATASHEET

Maximum Ratings

TA = 25 ¡ãC

Parameter

Symbol

Operating temperature

Top

min.

max.

-40 ¡ãC

100 ¡ãC

Storage temperature

Tstg

min.

max.

-40 ¡ãC

100 ¡ãC

Collector-emitter voltage

VCE

max.

35 V

Collector current

IC

max.

15 mA

Collector surge current

¦Ó ¡Ü 10 ?s

ICS

max.

75 mA

Total power dissipation

Ptot

max.

165 mW

ESD withstand voltage

acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

VESD

max.

2 kV

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4 | Version 1.4 | 2022-08-11

Values

SFH 30 9

DATASHEET

Characteristics

TA = 25 ¡ãC

Parameter

Symbol

Wavelength of max sensitivity

¦ËS max

typ.

860 nm

Spectral range of sensitivity

¦Ë10%

typ.

380 ... 1150

nm

Dimensions of chip area

LxW

typ.

0.45 x 0.45

mm x mm

Radiant sensitive area

A

typ.

0.038 mm?

Distance chip front to case surface

H

max.

min.

2.8

2.4

Half angle

¦Õ

typ.

12 ¡ã

Photocurrent

VCE = 5 V; Std. Light A; Ev = 1000 lx

IPCE

typ.

4500 ?A

Dark current

VCE = 20 V; E = 0

ICE0

typ.

max.

Rise time

IC = 1 mA; ¦Ë = 950 nm; VCC = 5 V; RL = 1 k¦¸

tr

typ.

7 ?s

Fall time

IC = 1 mA; ¦Ë = 950 nm; VCC = 5 V; RL = 1 k¦¸

tf

typ.

7 ?s

Collector-emitter saturation voltage 3)

IC = IPCE,min X 0.3; ¦Ë = 950 nm; Ee = 0.5 mW/cm?

VCEsat

typ.

200 mV

Capacitance

VCE = 0 V; f = 1 MHz; E = 0

CCE

typ.

5 pF

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5 | Version 1.4 | 2022-08-11

Values

1 nA

50 nA

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