Silicon NPN Phototransistor Version 1.3 SFH 309

2016-01-04

Silicon NPN Phototransistor Version 1.3

SFH 309

Features: ? Spectral range of sensitivity: (typ) 380 ... 1150 nm ? Package: 3mm Radial (T 1), Epoxy ? Special: High photosensitivity ? High linearity ? Available in groups

Applications ? Photointerrupters ? Industrial electronics ? For control and drive circuits

Ordering Information Type:

SFH 309 SFH 309-3/4 SFH 309-4 SFH 309-4/5 SFH 309-5 SFH 309-5/6

Photocurrent IPCE [?A] = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V 400 ... 5000

630 ... 2000 1000 ... 2000 1000 ... 3200 1600 ... 3200 1600 ... 5000

Ordering Code

Q62702P0859 Q62702P3592 Q62702P0998 Q62702P3593 Q62702P0999 Q62702P3594

Note: Only one bin within one packing unit (variation less than 2:1)

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Version 1.3

Maximum Ratings (TA = 25 ?C) Parameter Operating and storage temperature range Collector-emitter voltage Collector current Collector surge current ( < 10 ?s) Total Power dissipation Thermal resistance ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

Characteristics (TA = 25 ?C) Parameter Wavelength of max. sensitivity Spectral range of sensitivity

Radiant sensitive area ( 220 m) Dimensions of chip area

Distance chip front to case surface

Half angle Capacitance (VCE = 0 V, f = 1 MHz, E = 0) Dark current (VCE = 20 V, E = 0)

SFH 309

Symbol Top; Tstg VCE IC ICS

Ptot RthJA VESD

Values -40 ... 100

35 15 75

165 450 2000

Unit ?C V mA mA

mW K / W V

(typ) (typ)

(typ)

Symbol S max 10%

A

(typ)

L x W

(min ...

H

max)

(typ)

(typ)

CCE

(typ (max)) ICE0

Values 860 (typ) 380

... 1150 0.038

Unit nm nm

mm2

(typ) 0.45 x mm x

0.45

mm

(min ... max) mm 2.4 ... 2.8

? 12

?

5

pF

1 ( 50)

nA

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Version 1.3

SFH 309

Grouping (TA = 25 ?C, = 950 nm)

Group

Min Photocurrent Max Photocurrent Typ Photocurrent Rise and fall time

Ee = 0.5 mW/cm2, Ee = 0.5 mW/cm2, EV = 1000 lx, Std. IC = 1 mA, VCC = 5

VCE = 5 V

VCE = 5 V

Light A, VCE = 5 V V, RL = 1 k

IPCE, min [?A]

IPCE, max [?A]

IPCE [?A]

tr, tf [?s]

-2

400

800

1500

5

-3

630

1250

2800

6

-4

1000

2000

4500

7

-5

1600

3200

7200

8

-6

2500

5000

11200

9

Group

-2 -3 -4 -5 -6

Collector-emitter saturation voltage IC = IPCEmin x 0.3, Ee = 0.5 mW/cm2 VCEsat [mV] 200 200 200 200 200

Note.: IPCEmin is the min. photocurrent of the specified group.

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Version 1.3

Relative Spectral Sensitivity 1) page 9

Srel = f()

100

OHF01121

S rel %

80

60

40

20

0 400 600 800

Photocurrent 1) page 9 IPCE = f(VCE), Ee = Parameter

1000 nm 1200

Photocurrent 1) page 9 IPCE = f(Ee), VCE = 5 V

SFH 309

Photocurrent 1) page 9 IPCE / IPCE(25?C) = f(TA), VCE = 5 V

PCE 1.6 PCE25

1.4

OHF01524

1.2

1.0

0.8

0.6

0.4

0.2

0 -25 0 25 50 75 C 100

TA

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Version 1.3

Dark Current 1) page 9 ICEO = f(VCE), E = 0

10 1 nA CEO

10 0

OHF01527

10 -1

10 -2

10 -3 0 5 10 15 20 25 30 V 35

V CE

Collector-Emitter Capacitance 1) page 9

CCE = f(VCE), f = 1 MHz, E = 0

5.0

OHF01528

C CE pF

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

10 -2

10 -1

10 0

10 1 V 10 2 V CE

SFH 309

Dark Current 1) page 9

ICE0 = f(TA), VCE = 20 V, E = 0

10 3

nA

CEO

10 2

OHF01530

10 1

10 0

10

-1

-25

0

25

50

75 ?C 100

TA

Power Consumption

Ptot = f(TA)

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