PERFORMANCE OF VARIOUS TYPES OF RESISTORS AT LOW …



PERFORMANCE OF VARIOUS TYPES OF RESISTORS AT LOW TEMPERATURES

Test Report

Richard Patterson

NASA Glenn Research Center

&

Ahmad Hammoud

QSS Group, Inc.

&

Scott Gerber

ZIN Technologies

NASA Glenn Research Center

Cleveland, Ohio

August 17, 2001

Performance of Various Types of Resistors at Low Temperatures

Background

Low temperature electronics find potential application in many of NASA planetary exploration and deep space missions where extreme temperatures are encountered. Electronics designed for cryogenic temperature operation will improve reliability, increase energy density, and extend the operational lifetimes of space-based electronic systems. Electronic components needed in the development of NASA advanced power and control systems for next-generation space missions include, but not limited to, passive and active devices, power generation and conditioning modules, and application-specific integrated circuits.

In an effort to address some of these technological challenges, several types of standard and power resistors were investigated for potential use in low temperature environments. This work has been performed within the scope of the NASA Glenn Research Center Low Temperature Electronics Program and in support of the NASA/JPL Electronic Parts and Packaging Program (NEPP). The results of this and other research efforts will be utilized to aid in the proper design and selection of components for the development of electrical and electronic systems that are geared for low temperature operation with good reliability and high efficiency.

Test Setup

Several types of low to medium power resistors were selected for evaluation in terms of resistance stability as a function of temperature. These passive devices included metal film, carbon and ceramic composition, thin and thick film, wirewound, and power film resistors. Manufacturer specifications of these resistors are listed in Table I. Two values of each type of resistor were selected in this evaluation. These values were 10 ( (or closest value if unavailable) and 1 k(. For each type of resistor, two devices of the same value were included in this work to confirm certainty and validity of the performance of the resistor under test. The resistors, which totaled 32 devices, were characterized in terms of their resistance as a function of temperature in the frequency range of 10 Hz to 500 kHz. Four-wire measurements were performed on the resistors in the temperature range of 25 (C to -190 (C. The test temperatures were: 25 (C, 0 (C, -25 (C, -50 (C, -75 (C, -100 (C, -125 (C, -150 (C, -175 (C, and -190 (C. At a given test temperature, the device under test was allowed to soak for 20 minutes so that thermal equilibrium was reached before any measurement was made. A temperature rate of change of 10 (C/min was used throughout this work. After the last measurement was taken at the lowest temperature, i.e., -190 (C, data was then obtained at room temperature. Limited thermal cycling testing was also performed on the resistors. These tests consisted of subjecting the devices to a total of five thermal cycles between +25 (C and -190 (C.

Results and Discussion

As was mentioned before, two devices (device #1 and device #2) of the same value for each type of resistor were evaluatedsubjected in this work. These paired devices have shown exactly the same behavior in their characteristics with temperature. Therefore, data pertaining to only onedevice #1 of each type of resistor of a specific value will only be presented. Although the characterization of the resistors was performed as a function of temperature in the frequency range of 10 Hz to 500 MHz, only the results obtained at a frequency of 1 kHz are presented graphically in this section. Measured values obtained at all frequencies are, however, tabulated in Appendix A.

Table I. Manufacturer specifications of resistors [1-5].

|Type |Value |Tol. |Voltage |PWR |

| |(() |(%) |(V) |(W) |

|Metal Film |10 |10.00 |9.99 |0.0 |

| |1K |984.80 |979.31 |-0.6 |

|Thin Film |33 |33.07 |34.32 |3.8 |

| |1K |998.70 |1003.22 |0.5 |

|Carbon Film |10 |9.96 |10.46 |5.1 |

| |1K |1013.29 |1296.54 |28.0 |

|Ceramic |10 |9.49 |10.99 |15.8 |

|Composition | | | | |

| |1K |996.20 |1037.06 |4.1 |

Table III. Percent change in resistance at –190 (C versus resistor type.

[pic]

To determine the effect of extended low temperature exposure, the resistors were subjected to limited thermal cycling. The devices were thermally cycled for a total of five cycles in the temperature range of 25 (C to -190 (C. As with the previous tests, a temperature rate of 10 (C/min was used with a soak time of 20 minutes at both the room and the -190 (C temperatures. The values of the resistance of all resistors at room temperature, for both the pre-cycling and post-cycling conditions, are listed in Table IV. It can be clearly seen that all resistors exhibited no change due to this limited thermal cycling as they retained their resistance values.

Table IV. Resistance before and after five thermal cycles (@ 1 kHz).

| | |Resistance (() at 25 (C |

|Type |Value (() |Pre-cycling |Post-cycling |

|Metal Film |10 |10.00 |10.00 |

| |1K |999.15 |999.30 |

|Wirewound |10 |9.70 |9.70 |

| |1K |984.80 |984.79 |

|Thin Film |33 |33.07 |33.06 |

| |1K |995.41 |995.01 |

|Thick Film |100 |99.99 |99.98 |

| |1K |998.70 |998.68 |

|Carbon Film |10 |9.96 |9.96 |

| |1K |980.30 |980.13 |

|Carbon |15 |14.65 |14.78 |

|Composition | | | |

| |1K |1013.29 |1015.93 |

|Ceramic |10 |9.96 |9.95 |

|Composition | | | |

| |1K |993.09 |992.31 |

|Power Film |10 |10.00 |9.99 |

| |1K |996.20 |996.01 |

Conclusion

Passive as well as active electronic components capable of low temperature operation constitute a key requirement for the development of advanced and reliable power and communication systems for space applications. Eight types of resistors were investigated in this work for their potential use in extreme temperature environments. T he resistors were characterized in terms of their resistance stability between 25 (C and –190 (C in the frequency range of 20 Hz to 500 kHz. Limited thermal cycling was also performed on the resistors in the same temperature range. While some of these resistors showed excellent stability with temperature, others did not fare as well. More comprehensive testing, however, is required to fully characterize the behavior of these and other devices to determine their suitability and limitation in low temperature environments. Issues such as thermal cycling under long-term exposure and multi-stress conditions will need to be carried out for a complete assessment of the performance and reliability of these devices.

References

1. HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET Data Sheet, Honeywell.

2. IRFD110 HEXFET POWER MOSFET Data Sheet, International Rectifier.

Vishay resistor data sheet.

2. HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET Data Sheet, Honeywell.

2. IRFD110 HEXFET POWER MOSFET Data Sheet, International Rectifier.

Dale resistor data sheet.

3. HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET Data Sheet, Honeywell.

2. IRFD110 HEXFET POWER MOSFET Data Sheet, International Rectifier.

Ohmite resistor data sheet.

4. HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET Data Sheet, Honeywell.

2. IRFD110 HEXFET POWER MOSFET Data Sheet, International Rectifier.

Bourns resistor data sheet.

5. HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET Data Sheet, Honeywell.

2. IRFD110 HEXFET POWER MOSFET Data Sheet, International Rectifier.

Caddock resistor data sheet.

Acknowledgments

This work has been performed at the NASA Glenn Research Center under GESS Contract # NAS3-00142. Support was also provided by the Jet Propulsion Laboratory through the NASA Electronic Parts and Packaging (NEPP) Program.

Appendix A

Detailed experimental results obtained on all resistor types investigated in this work are listed in this appendix. The data represents the measured resistance of a specific resistor in the frequency range of 10 Hz to 500 kHz at a given test temperature. Room temperature measurement of the resistance obtained after the five thermal cycles (post) is also listed in the tables.

Table A-I. Resistance measurements for 10 ( metal film resistor as a function of frequency and temperature.

| |Temperature |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

|Freq. (Hz)|25(C |

Freq. (Hz) |25(C |0(C |-25(C |-50(C |-75(C |-100(C |-125(C |-150(C |-175(C |-190(C |25(C

post | |10 |996.19 |996.63 |997.68 |999.28 |1001.73 |1005.30 |1010.45 |1017.67 |1028.55 |1037.14 |996.07 | |50 |996.15 |996.60 |997.65 |999.25 |1001.70 |1005.27 |1010.39 |1017.60 |1028.50 |1037.13 |996.02 | |100 |996.14 |996.59 |997.62 |999.23 |1001.67 |1005.25 |1010.40 |1017.53 |1028.42 |1037.10 |996.01 | |200 |996.14 |996.59 |997.63 |999.24 |1001.67 |1005.27 |1010.44 |1017.61 |1028.35 |1037.10 |996.00 | |500 |996.14 |996.59 |997.63 |999.25 |1001.67 |1005.28 |1010.44 |1017.63 |1028.42 |1037.08 |996.01 | |1K |996.20 |996.60 |997.64 |999.29 |1001.70 |1005.32 |1010.51 |1017.67 |1028.45 |1037.06 |996.01 | |2K |996.17 |996.63 |997.67 |999.28 |1001.71 |1005.31 |1010.50 |1017.69 |1028.49 |1037.07 |996.05 | |5K |996.18 |996.64 |997.69 |999.29 |1001.72 |1005.32 |1010.53 |1017.66 |1028.48 |1037.07 |996.09 | |10K |996.19 |996.64 |997.71 |999.32 |1001.76 |1005.32 |1010.53 |1017.63 |1028.42 |1037.06 |996.20 | |20K |996.11 |996.56 |997.61 |999.21 |1001.66 |1005.20 |1010.38 |1017.47 |1028.27 |1036.94 |995.99 | |50K |995.98 |996.44 |997.46 |999.05 |1001.47 |1005.02 |1010.14 |1017.35 |1028.07 |1036.67 |995.94 | |100K |995.64 |996.00 |996.96 |998.51 |1000.97 |1004.48 |1009.47 |1016.64 |1027.33 |1035.61 |995.94 | |200K |995.16 |995.37 |996.30 |997.63 |999.66 |1002.80 |1007.55 |1014.24 |1024.38 |1032.00 |995.77 | |500K |985.01 |984.50 |984.88 |984.88 |985.67 |987.94 |990.80 |995.26 |1001.74 |1005.54 |994.48 | |

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