Chapter 3 : Fabrication of CMOS Integrated Circuits
Ans: Np= 6.6x1018 cm-3 and current density (J) =0.27µA/cm-2, x j=0.435 µm. If the implanted profile is Gaussian, later thermal anneal cycles produce a Gaussian profile as well. Fig. 3.50 : B, P, As and Sb implanted concentration profile in Si Fig. 3.51: Gaussian profile in the case of implantation followed by thermal anneal , using the expression ................
................
In order to avoid copyright disputes, this page is only a partial summary.
To fulfill the demand for quickly locating and searching documents.
It is intelligent file search solution for home and business.
Related download
Related searches
- chapter 3 developmental psychology quizlet
- mcgraw hill algebra1 chapter 3 lesson 8
- design of analog cmos integrated circuits
- chapter 3 psychology quizlet test
- psychology chapter 3 quiz answers
- developmental psychology chapter 3 quizlet
- strategic management chapter 3 quizlet
- psychology chapter 3 exam
- psychology chapter 3 test questions
- quizlet psychology chapter 3 quiz
- chapter 3 psychology quiz
- developmental psychology chapter 3 test