Chapter 3 : Fabrication of CMOS Integrated Circuits

Ans: Np= 6.6x1018 cm-3 and current density (J) =0.27µA/cm-2, x j=0.435 µm. If the implanted profile is Gaussian, later thermal anneal cycles produce a Gaussian profile as well. Fig. 3.50 : B, P, As and Sb implanted concentration profile in Si Fig. 3.51: Gaussian profile in the case of implantation followed by thermal anneal , using the expression ................
................

In order to avoid copyright disputes, this page is only a partial summary.

Google Online Preview   Download