Current Sensing in Pass Transistor-Based
Current Sensing in Pass Transistor-Based
Configurable Logic
Preliminary Report (March 14, 2005)
Louis Alarcon and Octavian Florescu
|[pic] |
|Figure 1. The pass transistor-based, current sense configurable logic |
|block with N data inputs and 2N programming bits. |
Abstract – In order to reduce leakage power, a configurable logic cell based on pass transistor logic trees and current sense circuits is shown. Different pass transistor tree topologies and current sense circuits are examined and various design, performance and implementation issues are presented.
I. Introduction
P
ower dissipation, both dynamic and standby, are becoming dominant factors in the design of integrated circuits [6]. Traditional design methodologies tend to concentrate more on active power and often overlook standby or leakage power. However, as transistors scale, it is predicted that leakage power will at some point dominate the overall power consumption [6].
To overcome leakage, new circuit topologies will have to be adopted, such as the use of long strings of transistors, or stacks. Stack-based circuits are known to significantly reduce leakage [11]. However, the penalty of using large fan-in stack-based circuits is a drop in performance, when compared to conventional logic styles [10] [11].
One way to regain the performance in stack-based circuits is to use current sensing. This is due to the fact that current sensing does not require large voltage swings to maintain acceptable noise margins [1]. Hence, bypassing the long delay times associated with conventional voltage sense logic.
Sensing small currents in stack-based circuits, with low voltage swings present a big challenge in the face of process variations, especially in the 90nm regime and below [7].
In this paper, we explore various current sensing architectures combined with a pass transistor logic tree.
II. Previous Work
Current-sensing amplifiers are prevalent in memories and interconnect. There are various types of current amplifiers specifically targeted for memory [1] [3] [8], and for interconnect [4] [9]. We will evaluate their effectiveness in detecting signals through pass transistor stacks, and based on these topologies, we will design our own current sense circuits specifically suited for pass transistor stacks.
III. The Configurable Pass Transistor Logic Block
We propose a configurable logic cell that can generate any desired logic function of N inputs. The functionality of the cell is similar to that of an N-input look-up table (LUT), with 2N programming bits and can therefore be used to create an FPGA-like fabric. This is desirable since LUT synthesis techniques are well known and can easily be integrated in existing design methodologies [5].
Our design consists of a transistor stack and a current sense amplifier, shown in Figure 1. The transistor stack processes this inputs and generates a path between the root input and one of the outputs. The sense amplifier senses the current at the output and generates a full swing CMOS voltage signal.
A. The Pass Transistor Logic Tree
The transistor stack is a binary pass transistor logic tree that directly implements a Binary Decision Diagram (BDD), shown in Figure 2.
The N inputs select a path in the logic tree that connects the root input of the tree to one of the stack outputs, either S+ or S-. The last stage of the stack is used to program the desired logic function by routing the appropriate minterms to the S+ output, and the
|[pic] |[pic] |
|(a) | |
| |(c) |
|[pic] | |
|(b) | |
| |
|Figure 2. (a) The basic pass transistor multiplexer (b) the |
|corresponding BDD element and (c) a pass transistor tree with two data |
|inputs and 4 programming bits. |
maxterms to the S- output. Note that this last stage presents a large capacitance at both outputs.
Since the outputs S+ and S- are pseudo-differential, where logic “1” can be interpreted as a current flowing out of the S+ output and logic “0” as current flowing out of the S- output, differential current sensing techniques can be applied.
The the selected path, from the root input to the output can be modeled by a (N+1)-stage distributed RC network as seen in [10].One expression for the delay of the current signal through this path can be found in [2] [4].
B. The Current Sense Circuit
The RC delay associated with the pass transistor path is prohibitive for full CMOS voltage level signals. By using current signals and current sense amplifiers, we can recover part of the performance loss by regenerating a signal from smaller voltage swings.
We investigated the sense-amplifier implementations compared in [3] and proposed our own as well: (1) the Resistance Sensing Amplifier, (2) the Current Starved Inverter Amplifier and (3) the DCVSL Sense Amplifier.
The Resistance Sensing Amplifier (RSA)
The Resistance Sensing Amplifier, as seen in Figure 3a, works by sensing the difference in resistance seen at its inputs. The path with the least resistance will provide the most current and therefore engender a stronger inverter. This will deterministically switch the latch.
The Current Starved Inverter Amplifier
|[pic] |
| |
|(a) |
|[pic] |
| |
|(b) |
|[pic] |
| |
|(c) |
|Figure 3. Proposed current sense amplifiers. (a) Resistance sensing |
|amplifier, (b) Current starved inverter amplifier and (c) DCVSL sense |
|amplifier. |
The current sources at the inputs of the RSA can be a source of mismatch. This can lead to deteriorated noise margins. The Current Starved Inverter amplifier in Figure 3b is similar to the Resistance Sensing Amplifier is similar to the RSA, except without the bias current source at the base. Therefore, the two branches receive different currents, which lead to deterministic latching. The noise margin is improved but it is slower due to the absence of the current source.
The DCVSL Sense Amplifier
To further reduce the complexity of the sense amplifier, the DCVSL sense amplifier was proposed (Figure 3c). This implementation offers the best noise margin but is also the slowest since the pull down network consists only of the stack on resistance at the inputs.
In all cases the resistive network at the input of the proposed sense amplifiers correspond to the resistances of the pass transistor stack. The root node of the tree is grounded and the two outputs, S+ and S- are connected to the two inputs of the sense amplifier. Each branch of the sense amplifier will see either an on stack resistance or an off stack resistance.
The proposed current sense amplifiers do not need multi phase clocks like the sense amplifiers shown in [3]. This greatly simplifies the clocking scheme and the routing to the logic block. In this scheme, the pass transistor stack is not preconditioned. Without preconditioning, the initial current from the stack is largely due to charge sharing when the stack capacitance is connected to the sense amplifier. In the worst case, the initial charge sharing currents in both branches of the sense amplifier are equal. This reduces the reliability of the sense amplifiers since the signal current can be smaller than the charge sharing current.
The duration of the charge sharing current is also problematic. The RC delay of the pass transistor chain determines the time it will take for the transient charge sharing current to subside. Hence, this is the time the sense amplifier must wait between preconditioning the pass transistor chain and sensing the current.
IV. Proposed Work
Other current sense topologies will be investigated; in particular, topologies that increase performance and decrease power consumption in the presence of variations. Sizing optimizations will be done and techniques to vary the stack threshold voltage will also be explored on the pass transistor stack to improve its RC delay constant. Different stack preconditioning schemes will be examined. This includes injecting currents from either side of the stack and various clocking schemes that provides a separate preconditioning and sensing time.
The resulting configurable pass transistor logic blocks will then be compared and characterized in terms of their active and standby power consumption, performance and reliability.
V. Summary
In terms of leakage, current sensing pass transistor logic clearly has an advantage over conventional topologies such as static CMOS. However, the difficulty lies in trying to recover the performance loss due to the RC delay constant of the pass transistor tree.
Current sensing recovers some of the performance loss by not requiring full swing voltages. Preconditioning of the transistor stack seems necessary in further improving the performance. By preconditioning, we would eliminate the large transient charge-sharing currents that initially overwhelm the inputs of the sense amplifier.
References
1] E. Seevinck et al, “Current-Mode Techniques for High-speed VLSI Circuits with Application to Current Sense Amplifier for CMOS SRAM’s”, IEEE J of Solid State Circuits, vol. 26, no. 4, pp 525 - 535, April 1991
2] R. Bashirullah et al, “Delay and Power Model for Current-Mode Signaling in Deep Submicron Global Interconnects”, Proc. of the IEEE Custom Integrated Circuits Conference 2002, pp 513 – 516, May 12-15, 2002
3] A. Chrisanthopoulos et al, “Comparative Study of Different Current Mode Sense Amplifiers in CMOS Technology”, IEE Proc. – Circuits Devices Syst., vol. 149, no. 3, June 2002
4] R. Bashirullah et al, “Current-Mode Signaling in Deep Submicrometer Global Interconnects”, IEEE Trans. on VLSI Systems, vol. 11, no. 3, June 2003
5] R. Francis, “A Tutorial on Logic Synthesis for Lookup Table-Based FPGAs”, IEEE/ACM ICCAD Digest of Technical Papers, pp 40 – 47, November 8 – 12, 1992
6] T. Sakurai, “Perspectives on Power Aware Electronics”, ISSCC Digest of Technical Papers, vol. 1, pp 26 – 29, 2003
7] S. Borkar, et al, “Parameter Variations and Impact on Circuits and Microarchitecture”, DAC 2003, June 2 – 6, 2003
8] M. Sinha, et al, “High Performance and Low Voltage Sense Amplifier Techniques for sub-90nm SRAM”, Proc. of the IEEE SOC Conf., pp 113 – 116, September 17 – 20, 2003
9] M. Sinha and W. Burleson, “Current-Sensing for Crossbars”, Proc. of the 14th IEEE ASIC/SOC Conf., pp 25 – 29, September 12 – 15, 2001
10] J. Rabaey et al, Digital Integrated Circuits: A Design Perspective, 2nd edition, Prentice Hall, 2003
11] S. Narendra et al, “Scaling of Stack Effect and Its Application for Leakage Reduction”, ISLPED 2001, pp 195 – 200, August 6 – 7, 2001
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