TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ...
2SK2231
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2--MOSV)
2SK2231
Chopper Regulator, DC/DC Converter and Motor Drive Applications
z 4 V gate drive
z Low drain-source ON-resistance
: RDS (ON) = 0.12 (typ.)
z High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
z Low leakage current : IDSS = 100 A (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25?C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25?C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
60
V
60
V
?20
V
5
A
20
A
20
W
129
mJ
5
A
2
mJ
150
?C
-55~150
?C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch-c) Rth (ch-a)
6.25
?C / W
125
?C / W
Note 1: Ensure that the channel temperature does not exceed 150?C. Note 2: VDD = 25 V, Tch = 25?C (initial), L = 7 mH, RG = 25 , IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel
temperature This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2006-11-17
Electrical Characteristics (Ta = 25?C)
Characteristic
Symbol
Test Condition
Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
IGSS IDSS V (BR) DSS Vth
RDS (ON)
|Yfs| Ciss Crss Coss
VGS = ?16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 1.3 A VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2231
Min Typ. Max Unit
--
--
?10
A
--
-- 100 A
60
--
--
V
0.8
--
2.0
V
-- 0.20 0.30
-- 0.12 0.16
3.0
5.0
--
S
-- 370 --
--
60
--
pF
-- 180 --
--
18
--
Turn-on time
ton
Switching time
Fall time
tf
--
25
--
ns
--
55
--
Turn-off time
Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge
toff
Qg
Qgs
VDD 48 V, VGS = 10 V, ID = 5 A
Qgd
-- 170 --
--
12
--
--
8
--
nC
--
4
--
Source-Drain Ratings and Characteristics (Ta = 25?C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode) Reverse recovery time Reverse recovery charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition -- --
IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / s
Min Typ. Max Unit
--
--
5
A
--
--
20
A
--
--
-1.7
V
--
70
--
ns
--
0.1
--
C
Marking
K2231
Part No. (or abbreviation code)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-17
2SK2231
3
2006-11-17
2SK2231
4
2006-11-17
2SK2231
RG = 25 VDD = 25 V, L = 7 mH
EAS
=
1 2
L I2
BVDSS BVDSS - VDD
5
2006-11-17
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