Research Article Ni-Based Ohmic Contacts to n -Type 4H-SiC: The ...
Pd Pt Ir 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4.0 4.5 5.0 5.5 Experimental eoretical (X 4H -SiC s =3.6eV ) Barrier height B (eV) F : Experimental dependence of the barrier height of ... SiC forming a whole spectrum of nickel silicides, depending on the details of the ohmic contact fabrication process. On ................
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