GE SiC Devices and Modules for Aviation Applications
GE SiC Milestones 2012 2013 2014 Pilot 4” fab @ GE-GRC Demo’dMOSFETs with V TH stable @200oC Industry-first 200 oC 1.2kV, 115mWGen1 qual. per AEC-Q101 Implemented QMS ISO9001-2008 for GE 4” SiC pilot fab 75kW, 20kHz Aviation inverter, 98.5% efficiency 1st in SiC industry to quantify TCR-related FIT vs. applied V DC 2017 2016 2011 2015 ... ................
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