Solid-state reaction of Pt thin film with single-crystal (001) /3-SiC
result in aggregation of the Pt into islands interspersed with bare SiC. Pt-silicide is formed when the annealing temperature is larger than 1000 °C. Solid-state reaction between bulk samples of SiC and Pt at 800-1000 °C has also been studied.6 Formation of Pt-silicides and carbon, as well as the interfacial melting, were observed at T 3= 900 ... ................
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