Silicon Carbide (SiC) and Silicon-on-Insulator (SOI) Electronics for ...

Electrical Engineering

and Computer Science

University of Illinois

at Chicago

Silicon Carbide (SiC) and Silicon-on-Insulator (SOI)

Electronics for Harsh Environmental Applications

Krishna Shenai, PhD

Professor, Electrical Engineering and Computer Science Dept.

University of Illinois at Chicago

Outline

Electrical Engineering

and Computer Science

University of Illinois

at Chicago

? Silicon carbide (SiC) high-power hightemperature electronics

¨C NASA Glenn Research Center, Cleveland, OH

¨C DARPA (Sterling Semiconductor)

¨C Infineon and Power Electronics Reliability Group (PERG)

? Silicon-on-insulator (SOI) RF and low-power

electronics

¨C US Army (PolyFET RF Devices, Allied Signal, Honeywell)

¨C Caltech/Jet Propulsion Laboratory (MIT Lincoln Labs,

Honeywell)

Bulk versus SOI Technology

Bulk

? No ¡°kink¡± in output current

? Low self-heating

Electrical Engineering

and Computer Science

University of Illinois

at Chicago

SOI

? Suppressed substrate coupling

? Low capacitance

? Excellent passive components

Reliability Characteristics

? Breakdown voltage

¨C SOI has about 25% higher VBDD

¨C SOI breakdown is softer

? Leakage current

¨C SOI typical has lower leakage

¨C High leakage here due to

unoptimized drain-body diode

Electrical Engineering

and Computer Science

University of Illinois

at Chicago

Electrical Engineering

and Computer Science

University of Illinois

at Chicago

DC Characteristics

25 ¡ãC

125 ¡ãC

Bias point

Bias point

? SOI has higher saturation current

? SOI current degrades less at elevated temperatures

? SOI shows some negative differential resistance from self-heating

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