PN2222, PN2222A General Purpose Transistors

PN2222, PN2222A

PN2222A is a Preferred Device

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage PN2222 PN2222A

Collector-Base Voltage

PN2222 PN2222A

Emitter-Base Voltage

PN2222 PN2222A

Collector Current ? Continuous

Total Device Dissipation

@ TA = 25?C Derate above 25?C

Total Device Dissipation

@ TC = 25?C Derate above 25?C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case

Symbol VCEO VCBO VEBO IC PD

PD

TJ, Tstg

Symbol RJA RJC

Value 30 40 60 75 5.0 6.0 600

625 5.0

1.5 12 ?55 to +150

Max 200

83.3

Unit Vdc

Vdc

Vdc

mAdc

mW mW/?C Watts mW/?C

?C

Unit ?C/W ?C/W



COLLECTOR 3

2 BASE

1 EMITTER

1 23

TO?92 CASE 29 STYLE 1

MARKING DIAGRAM

PN 222x YWW

PN222x= Device Code

x

= 2 or A

Y

= Year

WW = Work Week

ORDERING INFORMATION

Device

Package

Shipping

PN2222

TO?92

5000 Units/Box

PN2222A

TO?92

5000 Units/Box

PN2222ARLRA TO?92 2000/Tape & Reel

PN2222ARLRM TO?92 2000/Ammo Pack

PN2222ARLRP TO?92 2000/Ammo Pack

Preferred devices are recommended choices for future use and best overall value.

? Semiconductor Components Industries, LLC, 2000

1

November, 2000 ? Rev. 0

Publication Order Number: PN2222/D

PN2222, PN2222A

ELECTRICAL CHARACTERISTICS (TA = 25?C unless otherwise noted) Characteristic

OFF CHARACTERISTICS

Collector?Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)

PN2222 PN2222A

Collector?Base Breakdown Voltage (IC = 10 mAdc, IE = 0)

PN2222 PN2222A

Emitter?Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125?C) (VCB = 50 Vdc, IE = 0, TA = 125?C)

Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)

Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

PN2222 PN2222A

PN2222A

PN2222 PN2222A PN2222 PN2222A

PN2222A

PN2222A

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = ?55?C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1.) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1.) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1.)

PN2222A only

PN2222 PN2222A

Collector?Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc)

PN2222 PN2222A

(IC = 500 mAdc, IB = 50 mAdc)

Base?Emitter Saturation Voltage (Note 1.) (IC = 150 mAdc, IB = 15 mAdc)

PN2222 PN2222A

PN2222 PN2222A

(IC = 500 mAdc, IB = 50 mAdc) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

PN2222 PN2222A

Symbol

Min

V(BR)CEO

30

40

V(BR)CBO

60

75

V(BR)EBO

5.0

6.0

ICEX

?

ICBO ? ? ? ?

IEBO

?

IBL

?

hFE 35 50 75 35 100 50 30 40

VCE(sat) ? ?

? ?

VBE(sat) ? 0.6

? ?

Max

Unit

?

Vdc

?

?

Vdc

?

?

Vdc

?

10

nAdc

?Adc 0.01 0.01 10 10

100

nAdc

20

nAdc

? ? ? ? ? 300 ? ? ?

Vdc 0.4 0.3

1.6 1.0

Vdc 1.3 1.2

2.6 2.0

2

PN2222, PN2222A

ELECTRICAL CHARACTERISTICS (TA = 25?C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

SMALL?SIGNAL CHARACTERISTICS

Current?Gain ? Bandwidth Product (Note 2.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

PN2222 PN2222A

fT 250

300

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

PN2222 PN2222A

Cobo

?

Cibo ?

?

Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Small?Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)

Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)

SWITCHING CHARACTERISTICS PN2222A only

PN2222A PN2222A

PN2222A PN2222A

PN2222A PN2222A

PN2222A PN2222A

PN2222A

PN2222A

hie hre hfe hoe rbCc NF

2.0 0.25

? ?

50 75

5.0 25 ?

?

Delay Time Rise Time

(VCC = 30 Vdc, VBE(off) = ?0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)

Storage Time Fall Time

(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2)

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

td

?

tr

?

ts

?

tf

?

Max

Unit

MHz ? ?

8.0

pF

pF 30 25

k 8.0 1.25

X 10?4 8.0 4.0

? 300 375

mmhos 35 200

150

ps

4.0

dB

10

ns

25

ns

225

ns

60

ns

+16 V

0 -2 V

SWITCHING TIME EQUIVALENT TEST CIRCUITS

1.0 to 100 ?s, DUTY CYCLE 2.0%

1 k < 2 ns

+30 V 200

CS* < 10 pF

+16 V

0 -14 V

1.0 to 100 ?s, DUTY CYCLE 2.0%

< 20 ns

1 k 1N914

+30 V 200

CS* < 10 pF

Scope rise time < 4 ns

-4 V

*Total shunt capacitance of test jig, connectors, and oscilloscope.

Figure 1. Turn?On Time

Figure 2. Turn?Off Time

3

hFE, DC CURRENT GAIN

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000 700 500 300 200

100 70 50 30 20

10 0.1

0.2 0.3 0.5 0.7 1.0

PN2222, PN2222A

TJ = 125?C

25?C

-55?C

VCE = 1.0 V VCE = 10 V

2.0 3.0 5.0 7.0 10

20 30

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

50 70 100

200 300 500 700 1.0 k

1.0 TJ = 25?C

0.8

0.6

IC = 1.0 mA

0.4

10 mA

150 mA

500 mA

0.2

0

0.005 0.01 0.02 0.03 0.05

0.1

0.2 0.3 0.5

1.0

2.0 3.0 5.0

10

20 30 50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

200

IC/IB = 10

100

TJ = 25?C

70 50

tr @ VCC = 30 V td @ VEB(off) = 2.0 V

30

td @ VEB(off) = 0

20

10 7.0 5.0

3.0 2.0

5.0 7.0 10

20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 5. Turn?On Time

t, TIME (ns)

500

300

200

ts = ts - 1/8 tf

100

70

50

tf

30

20

VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25?C

10

7.0 5.0

5.0 7.0 10

20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 6. Turn?Off Time

t, TIME (ns)

4

NF, NOISE FIGURE (dB)

CAPACITANCE (pF)

PN2222, PN2222A

10

10

RS = OPTIMUM

f = 1.0 kHz

8.0

IC = 1.0 mA, RS = 150 500 ?A, RS = 200

RS = SOURCE RS = RESISTANCE

8.0

IC = 50 ?A

100 ?A, RS = 2.0 k

100 ?A

6.0

50 ?A, RS = 4.0 k

6.0

500 ?A

1.0 mA

4.0

4.0

NF, NOISE FIGURE (dB)

2.0

2.0

0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20

f, FREQUENCY (kHz)

50 100

Figure 7. Frequency Effects

0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

RS, SOURCE RESISTANCE (OHMS) Figure 8. Source Resistance Effects

fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

30

20 Ceb

10 7.0 5.0

Ccb 3.0

2.0 0.1

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitances

20 30 50

500 VCE = 20 V TJ = 25?C

300

200

100

70

50 1.0

2.0 3.0 5.0 7.0 10

20 30 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 10. Current?Gain Bandwidth Product

1.0 TJ = 25?C

0.8 VBE(sat) @ IC/IB = 10

0.6 VBE(on) @ VCE = 10 V

0.4

1.0 V

0.2

VCE(sat) @ IC/IB = 10 0

0.1 0.2 0.5 1.0 2.0

5.0 10 20

50 100 200

IC, COLLECTOR CURRENT (mA)

500 1.0 k

Figure 11. "On" Voltages

COEFFICIENT (mV/?C)

+0.5

0

RqVC for VCE(sat)

-0.5

-1.0

-1.5

-2.0

RqVB for VBE

-2.5 0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA)

Figure 12. Temperature Coefficients

V, VOLTAGE (VOLTS)

5

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