2N4401 General Purpose Transistors

2N4401

General Purpose Transistors

NPN Silicon

Features

? Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation

@ TA = 25?C Derate above 25?C

VCEO VCBO VEBO

IC PD

40

Vdc

60

Vdc

6.0

Vdc

600

mAdc

625

mW

5.0

mW/?C

Total Device Dissipation @ TC = 25?C Derate above 25?C

PD

1.5

W

12

mW/?C

Operating and Storage Junction Temperature Range

TJ, Tstg

-55 to

?C

+150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction-to-Ambient RqJA

200

?C/W

Thermal Resistance, Junction-to-Case

RqJC

83.3

?C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.



COLLECTOR 3

2 BASE

1 EMITTER

TO-92 CASE 29 STYLE 1

123 STRAIGHT LEAD

BULK PACK

1 2 3

BENT LEAD TAPE & REEL AMMO PACK

MARKING DIAGRAM

2N 4401 AYWW G

G

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

? Semiconductor Components Industries, LLC, 2010

1

February, 2010 - Rev. 4

2N4401 A Y WW G

= Device Code = Assembly Location = Year = Work Week = Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Publication Order Number: 2N4401/D

2N4401

ELECTRICAL CHARACTERISTICS (TA = 25?C unless otherwise noted) Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Note 1) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 1)

(IC = 1.0 mAdc, IB = 0) V(BR)CEO

40

(IC = 0.1 mAdc, IE = 0) V(BR)CBO

60

(IE = 0.1 mAdc, IC = 0) V(BR)EBO

6.0

(VCE = 35 Vdc, VEB = 0.4 Vdc)

IBEV

-

(VCE = 35 Vdc, VEB = 0.4 Vdc)

ICEX

-

-

Vdc

-

Vdc

-

Vdc

0.1

mAdc

0.1

mAdc

DC Current Gain

hFE (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc)

-

20

-

40

-

80

-

100

300

40

-

Collector-Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

-

0.4

Vdc

-

0.75

Base-Emitter Saturation Voltage SMALL-SIGNAL CHARACTERISTICS

(IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.75

0.95

Vdc

-

1.2

Current-Gain - Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance SWITCHING CHARACTERISTICS

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

250

-

MHz

-

6.5

pF

-

30

pF

1.0

15

k W

0.1

8.0

X 10-4

40

500

-

1.0

30

mmhos

Delay Time Rise Time

(VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc)

Storage Time Fall Time

(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

td

-

15

ns

tr

-

20

ns

ts

-

225

ns

tf

-

30

ns

ORDERING INFORMATION Device

2N4401

Package TO-92

Shipping 5000 Units / Bulk

2N4401G

TO-92 (Pb-Free)

5000 Units / Bulk

2N4401RLRA

TO-92

2000 / Tape & Reel

2N4401RLRAG

TO-92 (Pb-Free)

2000 / Tape & Reel

2N4401RLRMG

TO-92 (Pb-Free)

2000 / Tape & Ammo Box

2N4401RLRP

TO-92

2000 / Tape & Ammo Box

2N4401RLRPG

TO-92 (Pb-Free)

2000 / Tape & Ammo Box

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

2

CAPACITANCE (pF)

+16 V

0 -2.0 V

2N4401

SWITCHING TIME EQUIVALENT TEST CIRCUITS

1.0 to 100 ms, DUTY CYCLE 2.0%

< 2.0 ns

1.0 kW

+30 V 200 W

CS* < 10 pF

+16 V

0 -14 V

1.0 to 100 ms, DUTY CYCLE 2.0%

1.0 kW < 20 ns

+30 V 200 W

CS* < 10 pF

Figure 1. Turn-On Time

Scope rise time < 4.0 ns

-4.0 V

*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 2. Turn-Off Time

TRANSIENT CHARACTERISTICS

25?C

100?C

30

10

7.0

20

5.0

VCC = 30 V IC/IB = 10

Cobo

3.0

2.0

QT

10

Q, CHARGE (nC)

1.0

7.0

0.7

5.0

0.5

Ccb

0.3

3.0

0.2

QA

2.0 0.1

0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS)

Figure 3. Capacitances

20 30 50

0.1 10

20 30 50 70 100

200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

100 70 50

30 20

10 7.0 5.0

10

IC/IB = 10

tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0

20 30 50 70 100

200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn-On Time

t, TIME (ns)

100 70 50

30 20

10 7.0 5.0

10

tr tf

VCC = 30 V IC/IB = 10

20 30 50 70 100

200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise and Fall Times

t, TIME (ns)

3

ts, STORAGE TIME (ns)

300 200

100 70 50 30

10

2N4401

100

ts = ts - 1/8 tf IB1 = IB2

70

IC/IB = 10 to 20

50

30 20

t f , FALL TIME (ns)

20 30 50 70 100

200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

10

7.0 5.0

10

IC/IB = 20

VCC = 30 V IB1 = IB2

IC/IB = 10

20 30 50 70 100

200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE

VCE = 10 Vdc, TA = 25?C; Bandwidth = 1.0 Hz

10

10

IC = 1.0 mA, RS = 150 W

f = 1.0 kHz

8.0

IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW

RS = OPTIMUM RS = SOURCE

8.0

IC = 50 mA, RS = 4.0 kW

RS = RESISTANCE

IC = 50 mA IC = 100 mA

6.0

6.0

IC = 500 mA

IC = 1.0 mA

4.0

4.0

NF, NOISE FIGURE (dB)

2.0

2.0

0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20

f, FREQUENCY (kHz)

Figure 9. Frequency Effects

50 100

0 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k

RS, SOURCE RESISTANCE (OHMS) Figure 10. Source Resistance Effects

NF, NOISE FIGURE (dB)

4

2N4401

h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25?C

This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were

selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph.

hfe, CURRENT GAIN

300 200

100 70 50 30 20

0.1

2N4401 UNIT 1 2N4401 UNIT 2

0.2 0.3 0.5 0.7 1.0

2.0 3.0

IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 11. Current Gain

hie, INPUT IMPEDANCE (OHMS)

50k

20k 10k 5.0k

2.0k 1.0k 500

0.1

2N4401 UNIT 1 2N4401 UNIT 2

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

Figure 12. Input Impedance

hre , VOLTAGE FEEDBACK RATIO (X 10-4 )

10

7.0

5.0 2N4401 UNIT 1

3.0

2N4401 UNIT 2

2.0

1.0 0.7 0.5

0.3 0.2

0.1

0.2 0.3 0.5 0.7 1.0

2.0 3.0

IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 13. Voltage Feedback Ratio

hoe, OUTPUT ADMITTANCE (m mhos)

100 50

20 10 5.0 2.0 1.0

0.1

2N4401 UNIT 1 2N4401 UNIT 2

0.2 0.3 0.5 0.7 1.0

2.0 3.0

IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 14. Output Admittance

5

 ................
................

In order to avoid copyright disputes, this page is only a partial summary.

Google Online Preview   Download