2N4401 General Purpose Transistors

2N4401

General Purpose

Transistors

NPN Silicon



Features

? Pb?Free Packages are Available*

COLLECTOR

3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector ? Emitter Voltage

VCEO

40

Vdc

Collector ? Base Voltage

VCBO

60

Vdc

Emitter ? Base Voltage

VEBO

6.0

Vdc

Collector Current ? Continuous

IC

600

mAdc

Total Device Dissipation

@ TA = 25¡ãC

Derate above 25¡ãC

PD

625

5.0

mW

mW/¡ãC

Total Device Dissipation

@ TC = 25¡ãC

Derate above 25¡ãC

PD

1.5

12

W

mW/¡ãC

TJ, Tstg

?55 to

+150

¡ãC

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction?to?Ambient

RqJA

200

¡ãC/W

Thermal Resistance, Junction?to?Case

RqJC

83.3

¡ãC/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

2

BASE

1

EMITTER

TO?92

CASE 29

STYLE 1

1

12

3

STRAIGHT LEAD

BULK PACK

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

MARKING DIAGRAM

2N

4401

AYWW G

G

2N4401 = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb?Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb?Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

? Semiconductor Components Industries, LLC, 2010

February, 2010 ? Rev. 4

1

Publication Order Number:

2N4401/D

2N4401

ELECTRICAL CHARACTERISTICS (TA = 25¡ãC unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector?Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

?

Vdc

Collector?Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

60

?

Vdc

(IE = 0.1 mAdc, IC = 0)

Emitter?Base Breakdown Voltage

V(BR)EBO

6.0

?

Vdc

Base Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

IBEV

?

0.1

mAdc

Collector Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

ICEX

?

0.1

mAdc

20

40

80

100

40

?

?

?

300

?

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

?

Collector?Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

?

?

0.4

0.75

Vdc

Base?Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.75

?

0.95

1.2

Vdc

SMALL?SIGNAL CHARACTERISTICS

Current?Gain ? Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

250

?

MHz

Collector?Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

?

6.5

pF

Emitter?Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

?

30

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

1.0

15

kW

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

0.1

8.0

X 10?4

Small?Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

40

500

?

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

1.0

30

mmhos

(VCC = 30 Vdc, VBE = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td

?

15

ns

tr

?

20

ns

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts

?

225

ns

tf

?

30

ns

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

1. Pulse Test: Pulse Width ¡Ü 300 ms, Duty Cycle ¡Ü 2.0%.

ORDERING INFORMATION

Package

Shipping?

TO?92

5000 Units / Bulk

TO?92

(Pb?Free)

5000 Units / Bulk

TO?92

2000 / Tape & Reel

2N4401RLRAG

TO?92

(Pb?Free)

2000 / Tape & Reel

2N4401RLRMG

TO?92

(Pb?Free)

2000 / Tape & Ammo Box

TO?92

2000 / Tape & Ammo Box

TO?92

(Pb?Free)

2000 / Tape & Ammo Box

Device

2N4401

2N4401G

2N4401RLRA

2N4401RLRP

2N4401RLRPG

?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.



2

2N4401

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30 V

+30 V

1.0 to 100 ms,

DUTY CYCLE ¡Ö 2.0%

+16 V

0

-2.0 V

200 W

1.0 to 100 ms,

DUTY CYCLE ¡Ö 2.0%

+16 V

200 W

0

1.0 kW

< 2.0 ns

1.0 kW

-14 V

CS* < 10 pF

CS* < 10 pF

< 20 ns

-4.0 V

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn?On Time

Figure 2. Turn?Off Time

TRANSIENT CHARACTERISTICS

25¡ãC

100¡ãC

30

10

7.0

5.0

10

7.0

5.0

QT

2.0

1.0

0.7

0.5

0.3

0.2

Ccb

3.0

2.0

0.1

VCC = 30 V

IC/IB = 10

3.0

Cobo

Q, CHARGE (nC)

CAPACITANCE (pF)

20

QA

0.1

0.2 0.3 0.5

1.0

2.0 3.0 5.0

10

REVERSE VOLTAGE (VOLTS)

20 30

50

10

20

30

50 70 100

200

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitances

500

Figure 4. Charge Data

100

100

IC/IB = 10

70

VCC = 30 V

IC/IB = 10

70

tr

50

50

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VEB = 2.0 V

td @ VEB = 0

30

20

t, TIME (ns)

t, TIME (ns)

300

30

tf

20

10

10

7.0

7.0

5.0

5.0

10

20

30

50

70

100

200

300

10

500

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn?On Time

Figure 6. Rise and Fall Times



3

300

500

2N4401

300

100

ts¡ä = ts - 1/8 tf

IB1 = IB2

IC/IB = 10 to 20

VCC = 30 V

IB1 = IB2

70

50

t f , FALL TIME (ns)

t s¡ä, STORAGE TIME (ns)

200

100

70

IC/IB = 20

30

20

IC/IB = 10

10

50

7.0

30

5.0

10

20

30

50

70

100

200

300

500

10

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

300

500

SMALL?SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25¡ãC; Bandwidth = 1.0 Hz

10

f = 1.0 kHz

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

8.0

NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

8.0

10

IC = 1.0 mA, RS = 150 W

IC = 500 mA, RS = 200 W

IC = 100 mA, RS = 2.0 kW

IC = 50 mA, RS = 4.0 kW

6.0

4.0

2.0

IC = 50 mA

IC = 100 mA

IC = 500 mA

IC = 1.0 mA

6.0

4.0

2.0

0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0

f, FREQUENCY (kHz)

0

10

20

50

100

50

Figure 9. Frequency Effects

100 200

500 1.0k 2.0k 5.0k 10k 20k

RS, SOURCE RESISTANCE (OHMS)

50k 100k

Figure 10. Source Resistance Effects



4

2N4401

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 25¡ãC

This group of graphs illustrates the relationship between

hfe and other ¡°h¡± parameters for this series of transistors. To

obtain these curves, a high?gain and a low?gain unit were

selected from the 2N4401 lines, and the same units were

used to develop the correspondingly numbered curves on

each graph.

50k

hfe , CURRENT GAIN

200

100

70

2N4401 UNIT 1

2N4401 UNIT 2

50

30

0.1

0.2

0.3

0.5 0.7 1.0

2.0

3.0

20k

10k

5.0k

2.0k

1.0k

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

Figure 12. Input Impedance

10

5.0 7.0 10

100

7.0

5.0

2N4401 UNIT 1

2N4401 UNIT 2

3.0

2.0

1.0

0.7

0.5

0.3

0.2

2N4401 UNIT 1

2N4401 UNIT 2

500

5.0 7.0 10

hoe , OUTPUT ADMITTANCE (m mhos)

h re , VOLTAGE FEEDBACK RATIO (X 10-4 )

20

hie , INPUT IMPEDANCE (OHMS)

300

0.1

0.2

0.3

0.5 0.7 1.0

2.0

3.0

50

20

10

5.0

2N4401 UNIT 1

2N4401 UNIT 2

2.0

1.0

5.0 7.0 10

0.1

0.2

0.3

0.5 0.7 1.0

2.0 3.0

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio

Figure 14. Output Admittance



5

5.0 7.0 10

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