EECS150 - Digital Design Lecture 10 - Static Random Access ...
EECS150 - Digital Design Lecture 10 - Static Random Access
Memory (SRAM) part 1
Feb 16, 2012 John Wawrzynek
Spring 2012
EECS150 - Lec10-sram1
Page 1
Memory-Block Basics
? Uses:
Whenever a large collection of state elements is required.
? data & program storage
? general purpose registers ? data buffering
log2(M)
? table lookups
? CL implementation
M X N memory:
? Basic Types:
? RAM - random access memory
Depth = M, Width = N.
M words of memory, each word N bits wide.
? ROM - read only memory
? EPROM, FLASH - electrically programmable read only memory
Spring 2012
EECS150 - Lec10-sram1
Page 2
Memory Components Types:
? Volatile:
? Random Access Memory (RAM):
? DRAM "dynamic" Focus Monday ? SRAM "static" Focus Today
? Non-volatile:
? Read Only Memory (ROM): ? Mask ROM "mask programmable" ? EPROM "electrically programmable" ? EEPROM "erasable electrically programmable" ? FLASH memory - similar to EEPROM with programmer integrated on chip
All these types are available as stand alone chips or as blocks
inSoprtinhg 2e01r2 chips.
EECS150 - Lec10-sram1
Page 3
Standard Internal Memory Organization
2-D arrary of bit cells. Each cell stores one bit of data.
Special circuit tricks are used for the cell array to improve storage density.
? RAM/ROM naming convention:
? examples: 32 X 8, "32 by 8" => 32 8-bit words ? 1M X 1, "1 meg by 1" => 1M 1-bit words
Spring 2012
EECS150 - Lec10-sram1
Page 4
Address Decoding
sel_row1 sel_row2
Address
? The function of the address decoder is to generate a one-hot code word from the address.
? The output is use for row selection.
? Many different circuits exist for this function. A simple one is shown to the right.
Spring 2012
EECS150 - Lec10-sram1
Page 5
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